The BFU550W is a compact NPN silicon RF transistor designed for high-speed, low-noise applications within a plastic SOT323 package. Suitable for broadband and low noise amplifiers up to 2 GHz, it features a minimum noise figure of 0.6 dB at 900 MHz and a maximum stable gain of 18 dB at the same frequency. This transistor is ideal for high breakdown voltage and broadband RF applications, including ISM bands, oscillators, and high voltage supply systems, providing reliable performance in compact, surface-mounted formats.
Purchase the NXP BFU550W RF transistor online today and enhance your RF communication projects with its low noise figure, high gain, and reliable performance.Designed for broadband and low noise amplification up to 2 GHz, this surface-mounted transistor offers compact size and robust operation. Perfect for ISM applications, oscillators, and high-voltage systems, it ensures consistent performance in demanding environments. Order now to benefit from fast delivery, comprehensive datasheets, and application notes that simplify your design process. Equip your electronic systems with trusted NXP components for superior results.
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You can download the BFU550WX datasheet or visit the NXP website for support.
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