The BFU730F is an NPN wideband silicon germanium RF transistor designed for high-speed, low-noise microwave applications. Encased in a compact plastic SOT343F package, it offers high gain, low noise figure of 0.8 dB at 5.8 GHz, and maximum power gain of 18.5 dB at 5.8 GHz, making it ideal for low noise amplifiers, microwave drivers, and LNA stages in various microwave communication systems including Wi-Fi, LTE, GPS, and satellite downlink applications. Its specifications include collector-base voltage of 10 V, collector-emitter voltage of 28 V, collector current of 30 mA, and transition frequency of 55 GHz.
Enhance your microwave communication projects with the NXP BFU730F low noise RF transistor. Featuring high gain, low noise figure of 0.8 dB at 5.8 GHz, and a transition frequency of 55 GHz, it is perfect for low noise amplifiers, driver stages, and satellite applications. Its compact SOT343F package ensures easy integration into your designs. Reliable and high-performing, this transistor is ideal for LTE, Wi-Fi, GPS, and satellite communication systems. Order online today and benefit from NXP's quality assurance for your critical applications.
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You can download the BFU730F115 datasheet or visit the NXP website for support.
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