The MRFX1K80N is a high-power, broadband RF transistor designed for applications from 1.8 to 400 MHz, offering 1800 W CW output power at 65 V. Its rugged structure ensures high VSWR tolerance, making it ideal for broadcast, industrial, medical, and aerospace uses. This device features integrated ESD protection, high breakdown voltage, and can operate in single-ended or push-pull configurations. Suitable for linear amplification and RF power amplification, it is housed in a thermally efficient package with long-term supply assurance, making it perfect for demanding high-frequency applications.
Purchase the NXP MRFX1K80NR5 today and enhance your RF systems with a high-power, broadband transistor capable of handling from 1.8 to 400 MHz. This rugged device provides up to 1800 W CW output power at 65 V, ensuring reliable performance in broadcast, industrial, medical, and aerospace applications. With integrated ESD protection, high breakdown voltage, and a thermally efficient package, it guarantees long-lasting durability and exceptional linear amplification capabilities. Upgrade your RF design now with this industrial-grade power transistor capable of meeting demanding technical requirements.
You can click on the BUY or RFQ button to purchase MRFX1K80NR5 from an authorized NXP distributor.
You can download the MRFX1K80NR5 datasheet or visit the NXP website for support.
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