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ONSEMI 2SC5994TDE Bipolar NPN Transistor
The ONSEMI 2SC5994-TD-E is a high-performance NPN bipolar transistor built with an MBIT process. It's characterized by its low collector-emitter saturation voltage, large current capacity, and high-speed switching capabilities. Typical applications include voltage regulators, relay drivers, and lamp drivers, making it a versatile component for a wide range of industrial and consumer electronics. Its robust design and reliable performance ensure efficient operation in demanding environments. The transistor is available in a SOT-89 / PCP-1 package and is suitable for surface mounting.
ONSEMI 2SC5994TDE Bipolar NPN Transistor Specifications:
- Collector to Base Voltage: 100 V
- Collector to Emitter Voltage: 100 V
- VCEO: 50 V
- Emitter to Base Voltage: 6 V
- Collector Current: 2 A
- Collector Current(Pulse): 4 A
- Base Current: 400 mA
- Collector Dissipation: 1.3 W
- Collector Dissipation(Tc=25°C): 3.5 W
- Junction Temperature: 150 °C
- Storage Temperature: −55 to +150 °C
- Collector Cutoff Current: 1 μA
- Emitter Cutoff Current: 1 μA
- DC Current Gain (hFE1): 200-560
- DC Current Gain (hFE2): 40
- Gain-Bandwidth Product: 420 MHz
- Output Capacitance: 9 pF
- Collector to Emitter Saturation Voltage: 135-300 mV
- Base to Emitter Saturation Voltage: 0.9-1.2 V
- Collector to Base Breakdown Voltage: 100 V
- Collector to Emitter Breakdown Voltage: 100 V
- Emitter to Base Breakdown Voltage: 6 V
- Turn-On Time: 30 ns
- Storage Time: 330 ns
- Fall Time: 40 ns
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Frequently Asked Questions
Where can I buy ONSEMI 2SC5994TDE?
You can click on the BUY or RFQ button to purchase 2SC5994TDE from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part 2SC5994TDE?
You can download the 2SC5994TDE datasheet or visit the ONSEMI website for support.
Who is the manufacturer of 2SC5994TDE?
ONSEMI