ONSEMI FCH125N65S3R0F155 High-Voltage Power MOSFET
SuperFET III N-Channel MOSFET is designed for high voltage switching applications, offering an outstanding low on-resistance and charge performance due to charge balance technology. It withstands extreme dv/dt rates, reduces conduction loss, and ensures superior switching with ultra-low gate charge, making it ideal for telecom, industrial power supplies, and UPS systems. This TO-247 package device is fully tested for avalanche, RoHS compliant, and optimized for efficient power management in high-voltage scenarios, ensuring reliability and ease of integration in complex systems.
ONSEMI FCH125N65S3R0F155 High-Voltage Power MOSFET Specifications:
Drain to Source Voltage: 650 V
Gate to Source Voltage Dc: 430 V
Pulsed Drain Current: 60 A
Continuous Drain Current at 25°C: 24 A
Power Dissipation: 181 W
Operating Temperature Range: -55°C to +150°C
Thermal Resistance Junction to Case: 0.69 °C/W
Thermal Resistance Junction to Ambient: 40 °C/W
Gate Threshold Voltage: 25-45 V
Static Drain to Source On Resistance: 105-125 mΩ
Output Capacitance (Coss): 439 pF
Input Capacitance (Ciss): 1940 pF
Total Gate Charge at 10 V: 46 nC
Switching Times: Turn-On delay 24 ns, Rise time 19 ns, Turn-Off delay 48 ns, Fall time 4.6 ns
Package: TO-247-3LD
Max Avalanche Energy: 115 mJ
Buy the Buy ON Semiconductor FCH125N65S3R0F155 N-Channel MOSFET Part Number FCH125N65S3R0F155 Online
Secure your high-voltage switching needs with the ON Semiconductor FCH125N65S3R0F155 power MOSFET. Designed for efficient operation in telecom, industrial, and UPS applications, this device offers low on-resistance, ultra-low gate charge, and excellent avalanche capabilities. The TO-247 package ensures easy integration and robust performance in demanding environments. Trust this fully tested, RoHS-compliant MOSFET to deliver reliable high-voltage power switching, reduce conduction losses, and manage extreme dv/dt rates effectively. Order online now for fast delivery and superior system performance.
Order your ON Semiconductor FCH125N65S3R0F155 high-voltage MOSFET today and enhance your power switching performance with reliable, low-resistance devices.
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