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ONSEMI FCMT180N65S3 High-Voltage Power MOSFET

The FCMT180N65S3 is a high-voltage N-channel SuperFET® III MOSFET designed for industrial power applications. Offering a drain-source voltage of 650 V and continuous drain current of 17 A, this ultra-slim Power88 package device features low gate charge, low on-resistance, and excellent switching performance. It is optimized for telecom, server power supplies, UPS, solar power systems, and industrial power supplies, providing efficient, reliable operation with a compact footprint. Fully avalanche tested and RoHS compliant, it helps manage EMI and simplifies circuit design.

Authorized Distributors
Source:Newark
Part No:FCMT180N65S3
Stock:4690
Inv Date:06-11-2026
Price: Unit price: $6.66
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Source:DigiKey
Part No:FCMT180N65S3
Stock:1535
Inv Date:06-11-2026
Price: Unit price: $6.47
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Part No:FCMT180N65S3
Stock:2474
Inv Date:06-12-2026
Price: Unit price: $6.25
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Part No:FCMT180N65S3
Stock:0
Inv Date:06-11-2026
Price: Unit price: $2.53
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Part No:FCMT180N65S3
Stock:2994
Inv Date:06-12-2026
Price: N/A
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ONSEMI FCMT180N65S3 High-Voltage Power MOSFET Specifications:

  • Voss Drain to Source Voltage: 650 V
  • Gate to Source Voltage: ±80 V
  • Continuous Drain Current: 17 A
  • Pulsed Drain Current: 42.5 A
  • Maximum Power Dissipation: 111 W
  • Operating Temperature Range: -55°C to +150°C
  • Thermal Resistance, Junction to Ambient: 45 °C/W
  • Thermal Resistance, Junction to Case: 0.9 °C/W
  • Gate Threshold Voltage: 25-45 V
  • Static Drain to Source On Resistance: 152 mΩ (Typ), 180 mΩ (Max)
  • Output Capacitance (Coss): 30 pF (Typ)
  • Input Capacitance (Ciss): 1350 pF (Typ)
  • Total Gate Charge at 10V: 33 nC
  • Gate to Source Gate Charge: 8 nC
  • Switching Delay Time: 17 ns
  • Fall Time: 43 ns
  • Rise Time: 16 ns
  • Body Diode Forward Voltage: 12 V at 8.5 A
  • Body Diode Reverse Recovery Time: 290 ns
  • Repetitive Avalanche Energy: 1.39 mJ
  • Device Package: Power88, 8x8 mm, Slim Surface-Mount
  • RoHS Compliant, 100% Avalanche Tested

Buy the ON Semiconductor FCMT180N65S3 – Reliable MOSFET for Industrial Applications

Buy the ON Semiconductor FCMT180N65S3 now to ensure efficient power management for your industrial and telecom power supplies. This reliable high-voltage MOSFET features a 650 V drain-source voltage, low gate charge, and low on-resistance, delivering superior switching performance. Its compact Power88 package makes it ideal for space-constrained applications like UPS, solar power systems, and industrial drives. Fully avalanche tested and RoHS compliant, this device offers durability, safety, and excellent thermal characteristics, ensuring long-term operation in demanding power environments.

Get ON Semiconductor FCMT180N65S3 today—built for precision, high voltage switching, and long-lasting durability in industrial power systems.

Frequently Asked Questions

Where can I buy ONSEMI FCMT180N65S3?

You can click on the BUY or RFQ button to purchase FCMT180N65S3 from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FCMT180N65S3?

You can download the FCMT180N65S3 datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FCMT180N65S3?

ONSEMI

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