The FDB28N30 is a high-voltage N-Channel MOSFET designed for switching power applications such as power supplies, PFC, and electronic ballasts. Based on planar stripe and DMOS technology, it features low on-resistance, high avalanche energy, and excellent switching performance. Suitable for demanding power conversion environments, it provides a drain-source voltage of 300 V, continuous drain current of 28 A, and low gate charge of 39 nC. Its robust design includes avalanche testing, high-temperature capability, and RoHS compliance, making it ideal for industrial and electronic power systems.
ONSEMI FDB28N30TM High Voltage Power MOSFET Specifications:
Drain to Source Voltage: 300 V
Continuous Drain Current: 28 A
Pulsed Drain Current: 112 A
Gate to Source Voltage: ±30 V
Gate Threshold Voltage: 3.0 V to 5.0 V
On Resistance: 0.108 Ω typ., 0.129 Ω max.
Total Gate Charge: 39 to 50 nC
Avalanche Energy (Single Pulse): 588 mJ
Operating Temperature Range: -55°C to +150°C
Power Dissipation: 2.0 W
Package: D2-PAK
Thermal Resistance, Junction to Ambient: Max. 62.5 °C/W
Thermal Resistance, Junction to Case: Max. 0.5 °C/W
Maximum Soldering Temperature: 300°C for 5 seconds
Buy the Buy ON Semiconductor FDB28N30 Part Number FDB28N30TM Online
Purchase the ON Semiconductor FDB28N30 power MOSFET online now to secure a high-performance component ideal for power supplies, inverter circuits, and high-voltage switching. Featuring a drain-source voltage of 300 V, continuous drain current of 28 A, low gate charge of 39 nC, and avalanche capability, it ensures efficient operation and durability. This RoHS-compliant device is perfect for engineers seeking robust, reliable switching parts for industrial applications, energy systems, and electronic power conversion projects, ensuring excellent performance and long-term reliability.
Order your ON Semiconductor FDB28N30 high-voltage MOSFET today and enhance your power switching projects with reliable, efficient performance.
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