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ONSEMI FDB28N30TM High Voltage Power MOSFET

The FDB28N30 is a high-voltage N-Channel MOSFET designed for switching power applications such as power supplies, PFC, and electronic ballasts. Based on planar stripe and DMOS technology, it features low on-resistance, high avalanche energy, and excellent switching performance. Suitable for demanding power conversion environments, it provides a drain-source voltage of 300 V, continuous drain current of 28 A, and low gate charge of 39 nC. Its robust design includes avalanche testing, high-temperature capability, and RoHS compliance, making it ideal for industrial and electronic power systems.

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Source:Newark
Part No:FDB28N30TM
Stock:282
Inv Date:06-10-2026
Price: Unit price: $3.25
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Source:DigiKey
Part No:FDB28N30TM
Stock:10093
Inv Date:06-10-2026
Price: Unit price: $3.24
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Part No:FDB28N30TM
Stock:10802
Inv Date:06-11-2026
Price: Unit price: $3.24
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Part No:FDB28N30TM
Stock:800
Inv Date:06-10-2026
Price: Unit price: $1.81
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Part No:FDB28N30TM
Stock:800
Inv Date:06-10-2026
Price: Unit price: $1.81
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Part No:FDB28N30TM
Stock:0
Inv Date:06-10-2026
Price: Unit price: $1.04
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Source:Arrow EU
Part No:FDB28N30TM
Stock:2400
Inv Date:06-11-2026
Price: N/A
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Part No:FDB28N30TM
Stock:38
Inv Date:06-11-2026
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ONSEMI FDB28N30TM High Voltage Power MOSFET Specifications:

  • Drain to Source Voltage: 300 V
  • Continuous Drain Current: 28 A
  • Pulsed Drain Current: 112 A
  • Gate to Source Voltage: ±30 V
  • Gate Threshold Voltage: 3.0 V to 5.0 V
  • On Resistance: 0.108 Ω typ., 0.129 Ω max.
  • Total Gate Charge: 39 to 50 nC
  • Avalanche Energy (Single Pulse): 588 mJ
  • Operating Temperature Range: -55°C to +150°C
  • Power Dissipation: 2.0 W
  • Package: D2-PAK
  • Thermal Resistance, Junction to Ambient: Max. 62.5 °C/W
  • Thermal Resistance, Junction to Case: Max. 0.5 °C/W
  • Maximum Soldering Temperature: 300°C for 5 seconds

Buy the Buy ON Semiconductor FDB28N30 Part Number FDB28N30TM Online

Purchase the ON Semiconductor FDB28N30 power MOSFET online now to secure a high-performance component ideal for power supplies, inverter circuits, and high-voltage switching. Featuring a drain-source voltage of 300 V, continuous drain current of 28 A, low gate charge of 39 nC, and avalanche capability, it ensures efficient operation and durability. This RoHS-compliant device is perfect for engineers seeking robust, reliable switching parts for industrial applications, energy systems, and electronic power conversion projects, ensuring excellent performance and long-term reliability.

Order your ON Semiconductor FDB28N30 high-voltage MOSFET today and enhance your power switching projects with reliable, efficient performance.

Frequently Asked Questions

Where can I buy ONSEMI FDB28N30TM?

You can click on the BUY or RFQ button to purchase FDB28N30TM from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FDB28N30TM?

You can download the FDB28N30TM datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FDB28N30TM?

ONSEMI

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