This Fairchild N-Channel Logic Level PowerTrench MOSFET features low gate charge, high current capability, and a rugged DRIPAK package. It operates at 60 V and can handle continuous drain currents of 80 A, making it ideal for power tools, motor drives, and uninterruptible power supplies. Produced using advanced PowerTrench technology, it offers low Rds(on), excellent switching performance, and RoHs compliance. Its thermal characteristics include max junction-to-ambient resistance of 625 °C/W, ensuring efficient heat management for reliable operation in demanding applications.
ONSEMI FDB5800 Power Trench MOSFET Specifications:
Vds Drain to Source Voltage: 60 V
Id Continuous Drain Current: 80 A
Vgs Gate to Source Voltage: +20 V
Rds(on) Drain to Source Resistance: 6 mΩ (Typ.) at Vgs = 10 V
Gate Charge (Qgs): 184 nC (Total at Vgs=10 V)
Thermal Resistance Junction to Ambient: Max 625 °C/W
Operating Temperature Range: -55°C to 175°C
Package Type: D2PAK (TO-263)
Power Dissipation: 242 W
Avalanche Energy (Eas): 652 mJ
Thermal Resistance Junction to Case: Max 0.62 °C/W
Gate Threshold Voltage (Vth): 1.0 V (Min), 2.0 V (Max) at Igs=250 μA
Switching Time: Turn-On 621 ns, Turn-Off 59 ns
Buy the Buy ON Semiconductor FDB5800 Part Number FDB5800 Online
Purchase the ON Semiconductor FDB5800 power MOSFET online for your industrial, automation, or power supply applications. Designed with advanced PowerTrench technology, it provides low gate charge, high efficiency, and excellent thermal performance. Its rugged package and high current capabilities make it suitable for power tools, motor drives, and UPS systems. Ensure reliable operation with specifications supporting up to 80A drain current, 60V voltage ratings, and low Rds(on). Buy now to benefit from fast shipping, genuine quality, and competitive pricing for your high-power electronic projects.
Get ON Semiconductor FDB5800 today—built for high current capacity, low Rds(on), and reliable switching performance in power electronics.
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