The FDBL9403FO85T6 is a low Rds(on) N-channel power MOSFET designed for high-current switching applications. Capable of handling 300A drain current and a maximum drain-to-source voltage of 40V, it features low gate charge and capacitance for minimal driver loss. Its compact TOLL package makes it ideal for space-constrained designs. Qualified for AEC-Q101 standards and PPAP capable, it offers reliable, efficient performance for automotive and industrial power systems, with excellent thermal resistance and avalanche energy handling.
ONSEMI FDBL9403F085T6 Power MOSFET Specifications:
Drain-to-Source Voltage: 40 V
Continuous Drain Current at 25°C: 300 A
Pulsed Drain Current: 3565 A
Gate-to-Source Voltage: +20/-16 V
Maximum Power Dissipation: 1596 W
Rds(on): 0.84 - 0.95 mΩ at Vgs = 10 V
Gate Charge: 108 nC
Input Capacitance: 6985 pF
Output Capacitance: 3720 pF
Reverse Recovery Time: 84 ns
Avalanche Energy: 612.5 mJ
Operating Junction Temperature Range: -55°C to 175°C
Lead Soldering Temperature: 260°C for 10s
Thermal Resistance (Junction-to-Ambient): 36°C/W
Package: H-PSOF8L 11.68x9.80 mm
RoHS, Pb-Free, Halogen and BFR Free, AEC-Q101 Qualified
Buy the ON Semiconductor Series Power MOSFET: FDBL9403FO85T6
Purchase the ON Semiconductor Power MOSFET FDBL9403FO85T6 online today to enhance your power switching designs. With a 40V voltage rating, 300A current capacity, low Rds(on), and compact TOLL package, this device provides exceptional efficiency and space savings. Perfect for automotive and industrial applications, it features low gate charge, excellent thermal performance, and proven reliability. Secure your supply from authorized distributors or online stores and enjoy fast delivery and full technical support for your projects.
Order your ON Semiconductor Series Power MOSFET FDBL9403FO85T6 today and ensure your high-current switching needs are met with reliable, compact performance.
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