The FDD86113LZ is an N-Channel Shielded Gate PowerTrench MOSFET utilizing advanced Shielded Gate technology. Designed for high efficiency and low on-resistance, it features a maximum drain-source voltage of 100 V, a continuous drain current of 5.5 A, and a low Rds(on) of 104 mΩ at Vge = 10 V. Suitable for DC-DC conversion and power switching applications, it offers high avalanche energy capability, ESD protection > 6 KV, and RoHS compliance, ensuring reliable performance in surface-mount packages under demanding conditions.
ONSEMI FDD86113LZ N-Channel Power MOSFET Specifications:
Drain-Source Voltage: 100 V
Gate-Source Voltage: ±20 V
Drain Current (Continuous): 5.5 A at 25°C
Pulse Drain Current: 15 A
Maximum Power Dissipation: 29 W at 25°C
Maximum Junction Temperature Range: -55°C to +150°C
Thermal Resistance Junction to Case: 43°C/W
Thermal Resistance Junction to Ambient: 96°C/W
On-Resistance (Rds(on)): 104 mΩ at Vgs = 10 V, Id = 4.2A
Electrostatic Discharge Protection: > 6 KV
Package: D-PAK (TO-252)
RoHS Compliant
Single Pulse Avalanche Energy: 12 mJ
Gate Threshold Voltage: 1.5 V to 3 V
Gate Charge: 37.6 nC
Switching Times: Rise time 1.3 ns, Fall time 1.6 ns
Buy the Buy ON Semiconductor FDD86113LZ Part Number FDD86113LZ Online
Order the ON Semiconductor FDD86113LZ N-Channel Power MOSFET today for reliable high-voltage switching with low on-resistance. Perfect for power converters, DC-DC modules, and switching power supplies, this device features 100 V drain-source voltage, 5.5 A continuous drain current, and excellent ESD protection exceeding 6 KV. Its surface-mount D-PAK package ensures easy integration into various electronic assemblies, providing high performance, low switching losses, and RoHS compliance. Enhance your power management design with this robust, energy-efficient MOSFET, available now for quick online purchase.
Get ON Semiconductor FDD86113LZ today—designed for high efficiency power switching and durable operation in demanding electronic circuits.
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