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ONSEMI MBT6429DW1T1G Amplifier Transistor

The MBT6429DW1T1G is a high-performance NPN Silicon amplifier transistor designed for various industrial and electronic applications. It features a collector-emitter voltage of 45 V, collector-base voltage of 55 V, and emitter-base voltage of 60 V, with a maximum collector current of 200 mA. This RoHS-compliant device offers low saturation voltage, high current gain, and excellent noise characteristics, making it suitable for signal amplification, switching, and analog circuits. Its compact SC-88 package ensures easy integration into printed circuit boards for reliable operation in demanding environments.

Authorized Distributors
Source:Newark
Part No:MBT6429DW1T1G
Stock:3534
Inv Date:06-10-2026
Price: Unit price: $0.227
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Part No:MBT6429DW1T1G
Stock:962
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Price: Unit price: $0.24
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Part No:MBT6429DW1T1G
Stock:8711
Inv Date:06-11-2026
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Part No:MBT6429DW1T1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.25
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Part No:MBT6429DW1T1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.0287
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Part No:MBT6429DW1T1G
Stock:0
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Price: Unit price: $0.0287
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Part No:MBT6429DW1T1G
Stock:3000
Inv Date:06-10-2026
Price: Unit price: $0.0393
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Source:Arrow EU
Part No:MBT6429DW1T1G
Stock:6000
Inv Date:06-11-2026
Price: N/A
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Part No:MBT6429DW1T1G
Stock:10835
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ONSEMI MBT6429DW1T1G Amplifier Transistor Specifications:

  • Collector - Emitter Voltage: 45 V
  • Collector - Base Voltage: 55 V
  • Emitter - Base Voltage: 60 V
  • Collector Current: 200 mA
  • Total Device Dissipation: 150 mW at 25°C
  • Thermal Resistance, Rwa: 833 °C/W
  • Junction-to-Ambient Temperature Range: -55°C to +150°C
  • Collector - Emitter Breakdown Voltage: 45 V
  • Collector - Base Breakdown Voltage: 55 V
  • Emitter - Base Breakdown Voltage: 60 V
  • Collector Cutoff Currents: 0.04 µA (Vce = 30 V), 0.01 µA (Vop = 30 V), 0.01 µA (Vep = 5 V)
  • DC Current Gain: 500 to 1250 at 1 mA collector current
  • Saturation Voltage: 0.2 to 0.6 V at varying base currents
  • Input Capacitance: 8 pF, Output Capacitance: 3 pF
  • Noise Voltage: 3.0 mV, Noise Current: 3.0 pA at 25°C
  • Package: SC-88 (SOT-363), RoHS compliant

Buy the ON Semiconductor MBT6429DW1T1G – Reliable Amplifier Transistor for Industrial Applications

Enhance your electronic projects with the high-quality ON Semiconductor MBT6429DW1T1G amplifier transistor. This NPN silicon device offers high voltage, low saturation, and excellent noise characteristics. Its compact SC-88 package simplifies integration into printed circuit boards, ensuring reliable operation in industrial and commercial applications. Designed with RoHS compliance, it is ideal for signal amplification, switching, and analog circuits. Purchase online today to benefit from its durability, high gain, and versatile performance in demanding environments.

Buy ON Semiconductor MBT6429DW1T1G now and experience unmatched reliability and performance in signal amplification and switching circuits.

Frequently Asked Questions

Where can I buy ONSEMI MBT6429DW1T1G?

You can click on the BUY or RFQ button to purchase MBT6429DW1T1G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MBT6429DW1T1G?

You can download the MBT6429DW1T1G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MBT6429DW1T1G?

ONSEMI

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