The MBT6429DW1T1G is a high-performance NPN Silicon amplifier transistor designed for various industrial and electronic applications. It features a collector-emitter voltage of 45 V, collector-base voltage of 55 V, and emitter-base voltage of 60 V, with a maximum collector current of 200 mA. This RoHS-compliant device offers low saturation voltage, high current gain, and excellent noise characteristics, making it suitable for signal amplification, switching, and analog circuits. Its compact SC-88 package ensures easy integration into printed circuit boards for reliable operation in demanding environments.
DC Current Gain: 500 to 1250 at 1 mA collector current
Saturation Voltage: 0.2 to 0.6 V at varying base currents
Input Capacitance: 8 pF, Output Capacitance: 3 pF
Noise Voltage: 3.0 mV, Noise Current: 3.0 pA at 25°C
Package: SC-88 (SOT-363), RoHS compliant
Buy the ON Semiconductor MBT6429DW1T1G – Reliable Amplifier Transistor for Industrial Applications
Enhance your electronic projects with the high-quality ON Semiconductor MBT6429DW1T1G amplifier transistor. This NPN silicon device offers high voltage, low saturation, and excellent noise characteristics. Its compact SC-88 package simplifies integration into printed circuit boards, ensuring reliable operation in industrial and commercial applications. Designed with RoHS compliance, it is ideal for signal amplification, switching, and analog circuits. Purchase online today to benefit from its durability, high gain, and versatile performance in demanding environments.
Buy ON Semiconductor MBT6429DW1T1G now and experience unmatched reliability and performance in signal amplification and switching circuits.
Frequently Asked Questions
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