The FDG6304P is a dual P-Channel logic level enhancement mode field effect transistor produced using Fairchild’s high cell density, DMOS technology. Designed for low voltage applications, it features very low on-state resistance and direct operation in 3 V circuits. Suitable for digital switching, it has a maximum drain-source voltage of 25 V, continuous drain current of -0.41 A, and is packaged in a compact SC70-6 surface-mount package. It also includes a gate-source Zener for ESD ruggedness and operates within -55°C to 150°C temperature range, making it ideal for various switching and power management applications.
Buy the Fairchild FDG6304P dual P-Channel enhancement mode FET online today. Engineered for low-voltage digital switching, it offers low Rds(on), high ESD ruggedness, and reliable performance. Its compact SC70-6 package makes assembly simple. Ideal for power management, switching circuits, and applications demanding efficient power control. With a drain-source voltage of 25 V and continuous drain current of -0.41 A, this device guarantees power efficiency and durability in various electronic systems. Purchase now for high performance and ease of use.
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You can download the FDG6304P datasheet or visit the ONSEMI website for support.
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