The NSS1C201L is a low saturation voltage NPN transistor designed for high-speed switching in low voltage applications. It features ultra low Vce(sat), high current gain, and is suitable for DC-DC converters, power management in portable devices, motor controls, and automotive safety systems. Encased in a SOT-23 package, it can handle up to 2.0 A collector current and 100 V collector-emitter voltage. Its low thermal resistance and high junction temperature make it ideal for compact, efficient energy control solutions in electronic and automotive industries.
ONSEMI NSS1C201LT1G Power Transistor Specifications:
Collector-Emitter Voltage: 100 V
Collector-Base Voltage: 140 V
Emitter-Base Voltage: 7.0 V
Collector Current - Continuous: 2.0 A
Collector Current - Peak: 30 A
Total Device Dissipation: 490 mW at 25°C
Thermal Resistance Junction-to-Ambient: 255 °C/W
Power Dissipation Derating: 37 mW/°C above 25°C
Junction Operating Temperature: -55°C to +150°C
Case: SOT-23 (TO-236), Style 6
Marking: On semiconductor codes with Pb-Free marking
Storage Temperature: -55°C to +150°C
Buy the Buy ON Semiconductor NSS1C201L Part Number NSS1C201LT1G Online
Purchase the ON Semiconductor NSS1C201L low saturation NPN transistor online today. Designed for high-speed switching, it offers ultra low Vce(sat), high current gain, and robust thermal performance, ideal for DC-DC converters, portable device power management, motor control, and automotive safety systems. In a compact SOT-23 package, it supports up to 2.0 A collector current and 100 V collector-emitter voltage, ensuring efficient energy control in space-constrained applications. Reliable and cost-effective, order now for quick delivery.
Order your ON Semiconductor NSS1C201L transistor today and enhance your high-speed switching and power management projects with reliable, efficient components.
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