The FJP5027 is a high-voltage, high-reliability NPN silicon transistor designed for demanding industrial applications. It features high-speed switching capability with a Wide SOA, capable of handling collector currents up to 3A DC and pulses of up to 10A. The device boasts a collector-base voltage of 1100V, collector-emitter voltage of 800V, and a junction temperature rating of 150°C. Encased in a TO-220 package, it is suitable for high voltage switching, power regulation, and electronic switching applications requiring robust performance and thermal stability.
ONSEMI FJP5027OTU High Voltage Power Transistor Specifications:
Collector-Base Voltage: 1100 V
Collector-Emitter Voltage: 800 V
Emitter-Base Voltage: 7 V
Collector Current (DC): 3 A
Collector Current (Pulse): 10 A
Base Current: 15 A
Collector Dissipation: 50 W at 25°C
Maximum Junction Temperature: 150°C
Storage Temperature: -55°C to 150°C
Vco (Collector Cut-off Voltage): 800 V
Vebo (Emitter-Base Breakdown Voltage): 7 V
Current Gain Bandwidth Product: 15 MHz
Turn On Time: 0 μs (at Voc=400V)
Fall Time: 3 μs (Rload=2000Ω)
Buy the ON Semiconductor FJP5027 High Voltage – Reliable Power Switching for Industrial Applications
Purchase the ON Semiconductor FJP5027 high-voltage NPN transistor online today and benefit from its exceptional reliability, high-speed switching, and robust thermal performance. Designed for industrial power switching, the FJP5027 can handle collector voltages up to 1100V and currents up to 3A DC, making it ideal for power regulation, high-voltage switching, and electronic control systems. Its TO-220 package ensures easy mounting and effective heat dissipation, suitable for demanding industrial and electronic applications that require durable, high-performance transistors.
Buy ON Semiconductor FJP5027 now and experience unmatched reliability and high-voltage performance for demanding industrial applications.
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