ONSEMI NTH4L080N120SC1 Silicon Carbide Power MOSFET
The NTH4L080N120SC1 is a high-performance N-channel silicon carbide MOSFET designed for applications requiring high voltage and fast switching. With a drain-to-source voltage of 1200 V and a continuous drain current of 29 A at 25°C, this compact TO-247-4L package offers superior efficiency, low ON resistance, and high reliability. Its features include high-speed switching, avalanche testing, and RoHS compliance, making it ideal for industrial motor drives, UPS, inverter systems, and photovoltaic chargers, ensuring enhanced system performance and energy savings.
ONSEMI NTH4L080N120SC1 Silicon Carbide Power MOSFET Specifications:
Drain-to-Source Voltage: 1200 V
Continuous Drain Current: 29 A at 25°C
Gate-to-Source Voltage Range: -5/ +20 V
Max Gate-to-Source Voltage: ±25 V
Power Dissipation: 170 W at 25°C
Thermal Resistance, Junction-to-Case: 0.88 °C/W
Thermal Resistance, Junction-to-Ambient: 40 °C/W
Operating Junction Temperature Range: -55 to +175 °C
Avalanche Energy: 171 mJ
Channel Resistance: Max 110 mΩ at Vgs = 20 V, Id = 20 A
Switching Times: Turn-On delay 9-18 ns, Fall Time 54-43 ns
Gate Charge: 56 nC at Vgs = 20 V
Diode Forward Voltage: Max 37 V at 10 A
Buy the Buy ON Semiconductor NTH4L080N120SC1 Part Number 1200 V High Voltage SiC MOSFET Online
Purchase the ON Semiconductor Silicon Carbide Power MOSFET NTH4L080N120SC1 online now to elevate your power management systems. Designed for high voltage applications, this advanced MOSFET features rapid switching for increased system efficiency, lower energy losses, and improved reliability. Its compact TO-247-4L package offers unparalleled thermal performance and low gate charge, making it ideal for industrial motor drives, UPS systems, inverter circuits, and photovoltaic chargers. Enjoy fast delivery and expert support when you buy this high-performance component today.
Get ON Semiconductor NTH4L080N120SC1 today—built for high voltage, fast switching, and long-lasting durability in power conversion systems.
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