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ONSEMI FQD19N10LTM Power MOSFET

The FQD19N10LTM is a QFET N-channel enhancement-mode Power MOSFET utilizing planar stripe and DMOS technology. It offers low on-resistance, high switching efficiency, and excellent avalanche energy absorption, making it ideal for power supplies, audio amplifiers, motor control, and variable switching systems. This device features a low gate charge of 14nC, a reverse transfer capacitance of 35pF, and is 100% avalanche tested for reliability. Suitable for demanding industrial applications, it delivers high performance with minimal energy loss and thermal management. Market demand may cause delivery delays; product is not eligible for discounts.

Authorized Distributors
Source:Newark
Part No:FQD19N10LTM
Stock:223
Inv Date:06-10-2026
Price: Unit price: $1.75
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Source:DigiKey
Part No:FQD19N10LTM
Stock:9834
Inv Date:06-10-2026
Price: Unit price: $1.7
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Source:DigiKey
Part No:FQD19N10LTM
Stock:2400
Inv Date:06-10-2026
Price: Unit price: $0.82
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Part No:FQD19N10LTM
Stock:30160
Inv Date:06-11-2026
Price: Unit price: $1.7
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Part No:FQD19N10LTM
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.425
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Source:Arrow EU
Part No:FQD19N10LTM
Stock:2500
Inv Date:06-11-2026
Price: N/A
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ONSEMI FQD19N10LTM Power MOSFET Specifications:

  • Drain-Source Voltage: 100 V
  • Drain Current: 15.6 A (continuous at 25°C), 98 A (at Tg=100°C)
  • Pulsed Drain Current: 62.4 A
  • Gate-Source Voltage: +20 V
  • Single Pulsed Avalanche Energy: 220 mJ
  • Power Dissipation: 25 W (at 25°C), 50 W (derated above 25°C)
  • Operating Temperature Range: -55°C to +150°C
  • Thermal Resistance, Junction to Case: Max. 25°C/W
  • Thermal Resistance, Junction to Ambient: Max. 50°C/W
  • Package: D-PAK
  • Gate Charge: Typical 14nC
  • Crss Capacitance: Typical 35pF
  • Switching Delay Time: Turn-On 14-38 ns, Turn-Off 20-50 ns
  • Maximum Lead Soldering Temperature: 300°C for 5 seconds
  • Maximum Continuous Drain-Source Diode Forward Current: 156 A
  • Drain-Source Diode Forward Voltage: 15 V
  • Breakdown Voltage: 100 V

Buy the Fairchild FQD19N10LTM – Reliable N-Channel Power MOSFET for Industrial Applications

Order the Fairchild FQD19N10LTM online today to ensure your power applications benefit from superior switching efficiency, robust avalanche energy capacity, and low gate charge. This high-quality N-channel MOSFET is ideal for industrial, power supply, motor control, and audio amplifier systems. With advanced DMOS technology, it offers excellent thermal performance, low on-resistance, and reliable operation under demanding conditions. Purchase now to secure fast delivery, genuine product authenticity, and comprehensive technical support for your projects.

Buy Fairchild FQD19N10LTM now and experience unmatched reliability and high switching performance for demanding industrial power systems.

Frequently Asked Questions

Where can I buy ONSEMI FQD19N10LTM?

You can click on the BUY or RFQ button to purchase FQD19N10LTM from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part FQD19N10LTM?

You can download the FQD19N10LTM datasheet or visit the ONSEMI website for support.

Who is the manufacturer of FQD19N10LTM?

ONSEMI

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