The FQD19N10LTM is a QFET N-channel enhancement-mode Power MOSFET utilizing planar stripe and DMOS technology. It offers low on-resistance, high switching efficiency, and excellent avalanche energy absorption, making it ideal for power supplies, audio amplifiers, motor control, and variable switching systems. This device features a low gate charge of 14nC, a reverse transfer capacitance of 35pF, and is 100% avalanche tested for reliability. Suitable for demanding industrial applications, it delivers high performance with minimal energy loss and thermal management. Market demand may cause delivery delays; product is not eligible for discounts.
Maximum Lead Soldering Temperature: 300°C for 5 seconds
Maximum Continuous Drain-Source Diode Forward Current: 156 A
Drain-Source Diode Forward Voltage: 15 V
Breakdown Voltage: 100 V
Buy the Fairchild FQD19N10LTM – Reliable N-Channel Power MOSFET for Industrial Applications
Order the Fairchild FQD19N10LTM online today to ensure your power applications benefit from superior switching efficiency, robust avalanche energy capacity, and low gate charge. This high-quality N-channel MOSFET is ideal for industrial, power supply, motor control, and audio amplifier systems. With advanced DMOS technology, it offers excellent thermal performance, low on-resistance, and reliable operation under demanding conditions. Purchase now to secure fast delivery, genuine product authenticity, and comprehensive technical support for your projects.
Buy Fairchild FQD19N10LTM now and experience unmatched reliability and high switching performance for demanding industrial power systems.
Frequently Asked Questions
Where can I buy ONSEMI FQD19N10LTM?
You can click on the BUY or RFQ button to purchase FQD19N10LTM from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part FQD19N10LTM?