These high-speed, dual silicon switching diodes are designed for ultra-fast switching applications, housed in a compact SC-59 package ideal for surface mount designs. They feature a low forward voltage of around 1.2 V at 100 mA and reverse voltage ratings of 40 V and 80 V for models M1MA151WK and M1MA152WK respectively. With a maximum forward surge current of 500-750 mA, and a junction temperature of 150°C, these devices are suitable for automotive and other demanding electronic circuits, offering low capacitance and fast recovery times for reliable switching.
Maximum Reverse Voltage: 40 V for M1MA151WK, 80 V for M1MA152WK
Forward Current: 100 mA (single), 150 mA (dual)
Peak Forward Current: 225 mA (single), 340 mA (dual)
Peak Forward Surge Current: 500 mA (single), 750 mA (dual)
Reverse Leakage Current: 0.4 μA at specified voltages
Reverse Breakdown Voltage: 40 V for M1MA151WK, 80 V for M1MA152WK
Diode Capacitance: Less than 2.0 pF at 0 V, 1.0 MHz
Reverse Recovery Time: 3.0 ns, tested at 10 A and 6 V
Maximum Power Dissipation: 200 mW
Junction Temperature: Up to 150°C
Storage Temperature: from -55°C to +150°C
Buy the ON Semiconductor Series Dual Switching Diodes: M1MA151WK
Experience the speed and reliability of the high-performance, dual silicon switching diodes in surface-mount SC-59 packages. With voltage ratings of 40 V and 80 V, they deliver rapid switching with a recovery time of just 3 nanoseconds, ideal for automotive and high-speed electronics. Capacitance is minimized under 2 pF, ensuring low parasitic effects. These robust components support up to 150°C junction temperature and 200 mW power dissipation, making them perfect for demanding applications requiring fast, efficient switching with long-term stability. Purchase online today for immediate integration into your electronic designs.
Order your ON Semiconductor Series M1MA151WK high-speed dual silicon switching diode today and ensure your circuits boast rapid response and excellent reliability.
Frequently Asked Questions
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