The FQD3N60CTM-WS is a high-voltage N-Channel power MOSFET designed for switching applications such as power supplies, PFC, and lamp ballasts. It features a drain-source voltage of 600 V, continuous drain current of 2.4 A, low gate charge of 10.5 nC, and low on-resistance of 3.4 Ω. Manufactured using proprietary planar and DMOS technology, this device offers superior switching performance, high avalanche energy, and is 100% avalanche tested, ensuring reliability in demanding industrial electronics tasks.
Purchase the ON Semiconductor FQD3N60CTM-WS online today and ensure your electronic projects and industrial systems benefit from high-voltage robustness, low gate charge, and superior switching efficiency. This high-quality power MOSFET is perfect for power supplies, PFC, and electronic ballast solutions requiring dependable performance under demanding conditions. With 100% avalanche tested features, fast switching, and a rugged design, buy thisFQD3N60CTM-WS now to enhance your system’s efficiency and reliability with a proven component that meets industry standards and specifications.
You can click on the BUY or RFQ button to purchase FQD3N60CTMWS from an authorized ONSEMI distributor.
You can download the FQD3N60CTMWS datasheet or visit the ONSEMI website for support.
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