This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. Designed for high-voltage switching, it offers low on-state resistance, superior switching performance, and high avalanche energy strength, making it ideal for switched mode power supplies, active power factor correction, and electronic lamp ballasts. The device features a drain-source voltage of 500 V, drain current of 0.38 A, low gate charge of 4.9 nC, and is 100% avalanche tested for reliability in demanding applications.
Purchase the Fairchild FQN1N50CTA online today to experience premium high-voltage power switching, excellent reliability, and superior performance. Designed with proprietary DMOS technology, this MOSFET features a drain-source voltage of 500 V, low gate charge of 4.9 nC, and is 100% avalanche tested for maximum safety and dependability. Its compact TO-92 package suits various industrial power applications, active PFC, and electronic ballast systems. Ensure optimal efficiency and durability by ordering directly online from authorized distributors now.
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