The FQP30N06L is a high-performance N-channel enhancement mode Power MOSFET built with planar stripe and DMOS technology. This device offers low gate charge, high avalanche energy strength, and a maximum gate-source voltage of ±20V. It provides low on-resistance for efficient power switching, making it suitable for power supplies, motor control, and high-efficiency switching applications. Fully avalanche tested, it boasts a drain-source charge of about 50pF, ensuring reliability in demanding environments. Its robust design supports high-temperature operation up to 175°C and consistent performance in industrial, automotive, and consumer electronics.
Get the ON Semiconductor Series FQP30N06L N-channel Power MOSFET online today to enhance your power supply and motor control systems. Engineered with advanced planar stripe and DMOS technology, this high-capacitance, avalanche-tested MOSFET delivers low on-resistance and reliable switching performance. Suitable for demanding industrial, automotive, and consumer electronics applications, it features a maximum drain-source voltage of 60V, continuous drain current up to 32A, and a junction temperature rating of 175°C. Purchase now for fast delivery, genuine quality, and technical support to optimize your electronic designs.
You can click on the BUY or RFQ button to purchase FQP30N06L from an authorized ONSEMI distributor.
You can download the FQP30N06L datasheet or visit the ONSEMI website for support.
ONSEMI