This N-Channel enhancement mode power MOSFET handles 6.0A and 400V, utilizing proprietary planar stripe and DMOS technology for superior switching and low on-resistance. Designed for power supply, active power factor correction, and electronic lamp ballasts, it offers a low gate charge of 16nC, high avalanche energy, and excellent thermal performance. The device features robust avalanche testing, making it suitable for demanding electronic applications requiring high efficiency, reliability, and high voltage handling in a compact TO-220 package.
Operating and Storage Temperature Range: -55 to +150 °C
Thermal Resistance, Junction-to-Case: 171 °C/W
Thermal Resistance, Junction-to-Ambient: 625 °C/W
Gate Threshold Voltage: 20 - 40 V
Static Drain-Source On-Resistance: Typical 0.02 Ω at Vgs = 10V
Gate Charge: 16 - 20 nC
Buy the ON Semiconductor FQP6N40C – Reliable Power MOSFET for Industrial Applications
Order the ON Semiconductor FQP6N40C power MOSFET online now for dependable performance in high-voltage power supply, lighting, and industrial applications. Featuring low gate charge and excellent avalanche energy, this device ensures efficient operation and long-lasting durability. Perfect for design engineers seeking reliable components for active power correction, electronic ballasts, and switching power supplies. Purchase from authorized distributors or directly through our website to guarantee genuine quality and full product support, ensuring your projects meet the highest standards of performance and safety.
Get ON Semiconductor FQP6N40C today—built for high voltage and efficient switching in power systems and industrial equipment.
Frequently Asked Questions
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You can download the FQP6N40C datasheet or visit the ONSEMI website for support.
Who is the manufacturer of FQP6N40C?
ONSEMI
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