The FQP85N06 is a through-hole N-channel enhancement mode power MOSFET in a TO-220 package. Designed with planar stripe and DMOS technology, it offers low on-state resistance and excellent switching performance. The device features a drain-to-source voltage of 60V, continuous drain current of 85A, and power dissipation of 160W. It has a low gate charge of approximately 86nC, low reverse transfer capacitance around 165pF, and a low on-resistance of 800 milliohms at a gate source voltage of 10V. The operating temperature range spans from -55°C to 175°C, making it suitable for switch mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
Purchase the ON Semiconductor power MOSFET FQP85N06 online today for reliable high-current switching performance. Designed with advanced DMOS technology, it offers low on-resistance, excellent thermal stability, and fast switching capabilities. Ideal for power supplies, motor control, and audio amplification, this device ensures efficient energy management and durable operation. With a wide operating temperature range up to 175°C and compact TO-220 packaging, it provides a flexible solution for various demanding electronic applications. Order now to experience superior quality and fast delivery, all at an affordable price.
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You can download the FQP85N06 datasheet or visit the ONSEMI website for support.
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