The N-Channel QFET Power MOSFET in a TO-220 package features an 800V voltage rating, 6.6A continuous drain current, and a maximum RDS(on) of 1.9Ω at 10V gate-source voltage. It offers low gate charge around 27nC, low Crss of 10pF, and is 100% avalanche tested, providing excellent switching performance and high avalanche energy. Designed for switch mode power supplies, active power factor correction, and electronic ballasts, it ensures reliable, high-efficiency operation in demanding applications.
Buy the Buy ON Semiconductor FQPF7N80C Part Number 800V High-Voltage Power MOSFET Online
Purchase the ON Semiconductor FQPF7N80C High Voltage Power MOSFET online today to enhance your power supply designs and electronic ballast applications. With a maximum drain-source voltage of 800V, continuous drain current of 6.6A, low gate charge of approximately 27nC, and 100% avalanche tested performance, this device offers superior switching efficiency and high avalanche energy capability. Ideal for demanding switching applications, it provides reliable operation, high efficiency, and design flexibility. Secure your stock now to ensure your projects meet the highest performance standards.
Order your ON Semiconductor FQPF7N80C power MOSFET today and ensure your projects benefit from reliable high-voltage switching performance for demands of power supplies and lighting systems.
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You can download the FQPF7N80C datasheet or visit the ONSEMI website for support.
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