The RFD14N05L is a through-hole, 50V N-channel logic-level power MOSFET in a TO-251AA package. Manufactured using advanced megFET process technology, it features ultra-fine silicon utilization for optimal performance. The MOSFET's unique gate oxide design enables full conduction at gate voltages between 3V and 5V, allowing direct control from 5V logic circuits. It is suitable for switching regulators, converters, motor drivers, and relay applications. Key specifications include a drain-source voltage of 50V, a continuous drain current of 14A, power dissipation of 48W, and a low on-resistance of 0.1 ohm at Vgs 5V. The device operates over a temperature range from -55°C to 175°C.
Purchase the ON Semiconductor power MOSFET RFD14N05L online and elevate your electronic projects with a high-quality, reliable component. Optimized for switching regulators, motor drivers, and relay applications, it features a 50V drain-source voltage, 14A continuous current, and a low on-resistance for efficient operation. Manufactured using advanced megFET technology, it supports direct drive from logic circuits with Vgs between 3V and 5V. Easy to handle, in a TO-251AA package, and suitable for temperatures from -55°C to 175°C, ensuring durability and performance in demanding environments.
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You can download the RFD14N05L datasheet or visit the ONSEMI website for support.
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