This high-voltage N-Channel power MOSFET is designed for switching applications such as power supplies, active power factor correction, and electronic lamp ballasts. Manufactured using proprietary planar stripe and DMOS technology, it offers low on-state resistance, high avalanche energy strength, and superior switching performance. Suitable for professional power management systems, it features a drain-to-source voltage of 600V, a continuous drain current of 0.2A, and is RoHS compliant. Its robust design ensures reliable operation in demanding industrial environments, with excellent thermal and switching characteristics for efficient power control.
Secure your power management needs with the FQT1N60C power MOSFET from Fairchild. Featuring 600V voltage capacity, 0.2A continuous drain current, and low Rds(on), it ensures efficient switching for industrial power supplies, active PFC, and electronic ballasts. Its robust thermal and avalanche energy characteristics guarantee reliability and durability in demanding environments. Purchase online today and leverage superior switching performance, high avalanche energy strength, and RoHS compliance for your industrial applications.
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You can download the FQT1N60CTFWS datasheet or visit the ONSEMI website for support.
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