The FQS4903TF is an N-channel power MOSFET built with advanced planar stripe and DMOS technology, offering low on-state resistance, superior switching, and high avalanche energy. Ideal for switched mode power supplies, active power factor correction, and electronic lamp ballasts, it features low gate charge, minimal output capacitance, and 100% avalanche testing. With a drain-source voltage of 500 V and continuous drain current of 0.37A, this device provides reliable performance in industrial and power management scenarios, ensuring efficient and long-lasting operation in demanding environments.
Purchase the ON Semiconductor FQS4903TF now—this high-performance N-channel power MOSFET is engineered for industrial power supplies, lighting controls, and fallback systems. Featuring a 500V drain-source voltage, low gate charge of 6.3 nC, and a pulsed drain current of 148A, it ensures efficient, reliable operation under demanding conditions. Its advanced planar stripe and DMOS technology reduce resistance and improve switching. Ideal for electronics engineers and industrial power management, this device promises high avalanche energy, stability, and long-term durability, making it the ideal choice for your next project.
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You can download the FQS4903TF datasheet or visit the ONSEMI website for support.
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