The KSD1691YSTU is an NPN epitaxial silicon transistor designed for high power dissipation, with a collector-emitter voltage of 60V and a collector current of 5A, suitable for various industrial applications. It features low collector-emitter saturation voltage, large collector current capacity, and high power dissipation of 1.3W at 25°C. Its compact TO-126 package enhances thermal management, making it ideal for power switching and amplification in industrial and electronic equipment, ensuring reliable performance and durability under demanding conditions.
ONSEMI KSD1691YSTU Power Transistor Specifications:
Collector-Base Voltage: 60 V
Collector-Emitter Voltage: 60 V
Emitter-Base Voltage: 7 V
Collector Current (DC): 5 A
Collector Current (Pulse): 8 A
Base Current (DC): 1 A
Collector Dissipation: 13 W at 25°C
Collector Dissipation: 20 W at 25°C
Junction Temperature: 150°C
Storage Temperature Range: -55°C to 150°C
Gain (DC Current Gain): 60 to 400
Collector-Emitter Saturation Voltage: 0.3 V at 2A
Base-Emitter Saturation Voltage: 0.12 V at 2A
Turn ON Time: 0.2 µs
Safe Operating Area: Includes forward and reverse bias conditions
Package: TO-126 with dimensions 8.00 ±0.30 mm length, 3.25 mm width, and thermal characteristics suitable for high power operation
Buy the ON Semiconductor KSD1691YSTU – Reliable Power Transistor for Industrial Applications
Purchase the ON Semiconductor KSD1691YSTU online today and enjoy reliable high power switching capabilities for industrial and electronic applications. Its twin benefits of high collector current capacity and excellent thermal management make it ideal for demanding power circuits, amplifier modules, and industrial automation devices. Designed with a compact TO-126 package, it offers exceptional durability, efficient heat dissipation, and stable operation under intensive conditions. Order now to ensure your projects benefit from proven power transistor technology.
Get ON Semiconductor KSD1691YSTU today—built for high power switching and durable industrial performance.
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