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ONSEMI 2N4401TAR NPN Silicon Transistor

The ONSEMI 2N4401TAR is a general-purpose NPN silicon transistor, ideal for applications requiring a versatile and reliable switching or amplification component. It boasts a collector-emitter voltage of 40Vdc and a continuous collector current of 600mAdc, making it suitable for a wide range of circuits. The transistor's thermal characteristics, including a junction-to-ambient resistance of 200°C/W, allow for efficient heat dissipation. It is commonly used in amplifier circuits, switching circuits, and various industrial control systems.

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Source:Newark
Part No:2N4401TAR
Stock:5
Inv Date:06-10-2026
Price: Unit price: $0.203
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Part No:2N4401TAR
Stock:12544
Inv Date:06-11-2026
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Part No:2N4401TAR
Stock:26000
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Price: Unit price: $0.0419
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Part No:2N4401TAR
Stock:26000
Inv Date:06-11-2026
Price: Unit price: $0.0419
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Part No:2N4401TAR
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.0504
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Part No:2N4401TAR
Stock:4000
Inv Date:06-11-2026
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ONSEMI 2N4401TAR NPN Silicon Transistor Specifications:

  • Maximum Collector-Emitter Voltage: 40 Vdc
  • Maximum Collector-Base Voltage: 60 Vdc
  • Maximum Emitter-Base Voltage: 6.0 Vdc
  • Maximum Continuous Collector Current: 600 mAdc
  • Maximum Total Device Dissipation @ TA= 25°C: 625 mW
  • Maximum Total Device Dissipation @ TC= 25°C: 1.5 W
  • Operating Junction Temperature Range: −55 to +150 °C
  • Thermal Resistance, Junction-to-Ambient: 200 °C/W
  • Thermal Resistance, Junction-to-Case: 83.3 °C/W
  • DC Current Gain (hFE) @ IC= 0.1 mAdc, VCE= 1.0 Vdc: 20
  • DC Current Gain (hFE) @ IC= 1.0 mAdc, VCE= 1.0 Vdc: 40
  • DC Current Gain (hFE) @ IC= 10 mAdc, VCE= 1.0 Vdc: 80
  • DC Current Gain (hFE) @ IC= 150 mAdc, VCE= 1.0 Vdc: 100
  • Collector-Emitter Saturation Voltage (VCE(sat)) @ IC= 150 mAdc, IB= 15 mAdc: 0.4 Vdc
  • Collector-Emitter Saturation Voltage (VCE(sat)) @ IC= 500 mAdc, IB= 50 mAdc: 0.75 Vdc
  • Base-Emitter Saturation Voltage (VBE(sat)) @ IC= 150 mAdc, IB= 15 mAdc: 0.75 Vdc
  • Current-Gain − Bandwidth Product (fT) @ IC= 20 mAdc, VCE= 10 Vdc, f = 100 MHz: 250 MHz
  • Collector-Base Capacitance (Ccb) @ VCB= 5.0 Vdc, IE= 0, f = 1.0 MHz: 6.5 pF
  • Emitter-Base Capacitance (Ceb) @ VEB= 0.5 Vdc, IC= 0, f = 1.0 MHz: 30 pF

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Frequently Asked Questions

Where can I buy ONSEMI 2N4401TAR?

You can click on the BUY or RFQ button to purchase 2N4401TAR from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part 2N4401TAR?

You can download the 2N4401TAR datasheet or visit the ONSEMI website for support.

Who is the manufacturer of 2N4401TAR?

ONSEMI

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