The MJ11012G is an NPN bipolar power Darlington transistor designed for use as an output device in complementary general purpose amplifier applications. It features monolithic construction with built-in base-emitter shunt resistors, making it suitable for industrial and power management applications. Capable of handling collector currents up to 30 A and collector-emitter voltages of 60 V, it provides high DC current gain, high power dissipation, and junction temperature operation up to 200°C. Its robust thermal characteristics ensure reliable operation in demanding environments.
Buy the Buy ON Semiconductor MJ11012G Power Transistor Part Number MJ11012G Online
Purchase the ON Semiconductor MJ11012G power transistor online today to ensure high-performance operation with 30A collector current, 60V voltage ratings, and excellent thermal stability. This high-current NPN Darlington device features monolithic construction with built-in resistors for enhanced reliability and durability in industrial applications. With a dissipation capacity of 200W at 25°C, it delivers dependable power handling for amplifiers, power supplies, and industrial control systems. Order now to improve your designs with trusted power components.
Buy ON Semiconductor MJ11012G power transistor now for robust high-current amplification and reliable industrial power management.
Frequently Asked Questions
Where can I buy ONSEMI MJ11012G?
You can click on the BUY or RFQ button to purchase MJ11012G from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part MJ11012G?
You can download the MJ11012G datasheet or visit the ONSEMI website for support.
Who is the manufacturer of MJ11012G?
ONSEMI
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