The MJD117T4G is a high-performance PNP silicon power transistor designed for switching and amplifier applications. Encased in a surface-mount DPAK package, it features a maximum collector-emitter voltage of 100V, collector current of 2A, and power dissipation of 20W at 25°C. The device offers low saturation voltages, high DC gain, and is qualified for automotive use with AEC-Q101 compliance. Its robust thermal and electrical characteristics make it suitable for use in switching regulators, converters, and power amplification stages where reliability and efficiency are critical.
Saturation Voltages: VCEO(sus) 100 V, VBE(sat) 28 V
Lead configuration suitable for surface mount applications
Case: 369C DPAK package, RoHS compliant and Pb-Free
Operating Temperature Range: -65°C to +150°C
Designed for high-efficiency power switching and driver stages
Buy the ON Semiconductor Series Power Transistor: MJD117T4G
Enhance your electronic projects with the high-reliability power transistor suitable for switching and amplifying in power supplies, converters, and amplifiers. The MJD117T4G features a robust surface-mount DPAK package, a maximum collector-emitter voltage of 100V, and a collector current of 2A, ensuring excellent thermal and electrical performance. Ideal for automotive and industrial applications, it offers low saturation voltages, high gain, and is RoHS compliant. Purchase online today and benefit from fast delivery and exceptional quality for your power management needs.
Order your ON Semiconductor Series Power Transistor MJD117T4G today and give your power management projects the dependable quality they deserve.
Frequently Asked Questions
Where can I buy ONSEMI MJD117T4G?
You can click on the BUY or RFQ button to purchase MJD117T4G from an authorized ONSEMI distributor.
How do I troubleshoot issues or seek technical support for part MJD117T4G?
You can download the MJD117T4G datasheet or visit the ONSEMI website for support.
Who is the manufacturer of MJD117T4G?
ONSEMI
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