The MMBT5089LT1G is a high-gain, low-noise NPN bipolar transistor ideal for general-purpose amplification in industrial, automotive, and power management applications. This surface-mount device offers low RDS (ON) for increased efficiency and battery longevity. Qualified under AEC-Q101 standards and PPAP capable, it is suitable for automotive use and demanding industrial environments. The device operates at a maximum collector-emitter voltage of 25V and collector-base voltage of 30V, with a maximum collector current of 50mA. It features a package designed for compactness and thermal efficiency, making it a reliable component in various electronic systems.
Junction and Storage Temperature Range: -55°C to +150°C
Package Type: SOT-23 (TO-236)
Pb-Free, Halogen-Free, ROHS Compliant
High DC Current Gain: 300 to 900 (at Ic=100µA, Vg=5V)
Low Noise Figure: 3.0 dB
Collector Cutoff Current: 50 nA at 20 V, Ie=0
Operating Temperature Range: -55°C to +150°C
Noise Voltage: 30 nV, Noise Current: 30 pA
Buy the ON Semiconductor MMBT5089LT1G – Reliable Low Noise Transistor for Industrial Applications
Purchase the ON Semiconductor MMBT5089LT1G low noise bipolar transistor online today. Designed for reliable amplification in industrial, automotive, and power management applications, this high-gain NPN device features low RDS (ON), meets AEC-Q101 standards, and is PPAP capable. Its compact surface-mount package ensures efficient thermal performance and space savings. Ideal for demanding environments, the transistor offers extended durability and consistent performance. Order now for quick delivery and enjoy enhanced system reliability in your electronic projects.
Get ON Semiconductor MMBT5089LT1G today—built for precision, high gain, and long-lasting durability in industrial and automotive systems.
Frequently Asked Questions
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