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ONSEMI MMBTA55LT1G PNP Bipolar Transistor

The MMBTA55LT1G is a PNP bipolar transistor designed for linear and switching applications. It is housed in a surface-mount package suitable for low-power applications. The device features low RDS(on), which improves efficiency and extends battery life. It is qualified under AEC-Q101 and capable of PPAP, making it suitable for industrial, power management, and automotive applications.

Authorized Distributors
Source:Newark
Part No:MMBTA55LT1G
Stock:12000
Inv Date:06-10-2026
Price: Unit price: $0.032
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Source:DigiKey
Part No:MMBTA55LT1G
Stock:50482
Inv Date:06-11-2026
Price: Unit price: $0.19
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Part No:MMBTA55LT1G
Stock:6171
Inv Date:06-11-2026
Price: Unit price: $0.19
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Part No:MMBTA55LT1G
Stock:0
Inv Date:06-11-2026
Price: Unit price: $0.09
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Part No:MMBTA55LT1G
Stock:21000
Inv Date:06-11-2026
Price: Unit price: $0.0215
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Part No:MMBTA55LT1G
Stock:21000
Inv Date:06-11-2026
Price: Unit price: $0.0215
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Part No:MMBTA55LT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.0244
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Source:Arrow EU
Part No:MMBTA55LT1G
Stock:3000
Inv Date:06-11-2026
Price: N/A
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Part No:MMBTA55LT1G
Stock:6113
Inv Date:06-11-2026
Price: N/A
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ONSEMI MMBTA55LT1G PNP Bipolar Transistor Specifications:

  • Collector - Emitter Voltage Vceo: -60 V (MMBTA55), -80 V (MMBTAS6, SMMBTAS6)
  • Collector - Base Voltage Voeo: -60 V (MMBTA55), -80 V (MMBTAS6, SMMBTAS6)
  • Emitter - Base Voltage VeBo: -4.0 V
  • Collector Current - Continuous Io: -500 mA
  • Total Device Dissipation on FR-5 Board Pp: 225 mW at 25°C, derate 18 mW/°C
  • Total Device Dissipation on Alumina Substrate Pp: 300 mW at 25°C, derate 24 mW/°C
  • Thermal Resistance Junction-to-Ambient: Raa 556°C/W (FR-5 board), 417°C/W (alumina substrate)
  • Storage Temperature Tu, Tetg: -55°C to +150°C
  • Case: SOT-23, Dimensions in millimeters, Pb-Free, RoHS and halogen free
  • Device is RoHS compliant, Pb-Free, Halogen Free, and PPAP Capable

Buy the ON Semiconductor MMBTA55LT1G – Reliable PNP Transistor for Industrial Applications

Order the ON Semiconductor MMBTA55LT1G PNP bipolar transistor online today for reliable performance in low-power switching, industrial, and automotive applications. This surface-mount device offers excellent efficiency and durability, with low RDS(on) to enhance power management. Suitable for OEM assembly and repair, it features RoHS compliance, PPAP capability, and wide temperature range operation from -55°C to +150°C. Ensure your system achieves optimal performance by choosing this trusted, high-quality transistor for versatile electronic circuit needs.

Get ON Semiconductor MMBTA55LT1G today—built for precision and long-lasting durability in low-power switching and linear applications.

Frequently Asked Questions

Where can I buy ONSEMI MMBTA55LT1G?

You can click on the BUY or RFQ button to purchase MMBTA55LT1G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MMBTA55LT1G?

You can download the MMBTA55LT1G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MMBTA55LT1G?

ONSEMI

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