The silicon carbide Schottky diode offers superior switching performance, high reliability, and no reverse recovery, making it ideal for high-efficiency power systems. Its features include a 650 V reverse voltage, 20 A continuous forward current, avalanche rated at 49 mJ, and maximum junction temperature of 175°C. Suitable for automotive HEV-EV onboard chargers and DC-DC converters, this device provides faster switching, higher power density, reduced EMI, and enhanced thermal performance. The TO-247-3LD package ensures ease of mounting and integration into demanding electronic applications.
Forward Voltage Drop: 1.7 V at 10A and 25°C, up to 2.0 V at 175°C
Capacitive Charge: 25 nC at 400V
Device Package: TO-247-3LD, Pb-Free, Halogen Free
Buy the Buy ON Semiconductor FFSH2065BDN Part Number FFSH2065BDN Online
Purchase ON Semiconductor FFSH2065BDN silicon carbide Schottky diode online to enhance your power electronic projects. Featuring 650 V reverse voltage and 20 A current capacity, it ensures superior efficiency, thermal management, and reliability for automotive, aerospace, and industrial applications. Its avalanche rating of 49 mJ and high surge current capacity provide robustness in demanding environments. The TO-247-3LD package simplifies mounting, enabling seamless integration into complex power systems. Order now for fast delivery and superior performance in your high-power designs.
Get ON Semiconductor FFSH2065BDN diode today—built for high voltage, fast switching, and long-lasting power reliability in automotive and industrial systems.
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