The MUN2214T1G is an NPN bipolar digital transistor designed to simplify circuit design by integrating a bias network. It replaces the combination of a single transistor and external bias resistors, including a base resistor and base-emitter resistor, into a single monolithic device. This integration reduces the overall component count, saves circuit space, and streamlines assembly. The device is suitable for industrial and power management applications.
ONSEMI MUN2214T1G Digital Bias Transistor Specifications:
Collector-Base Voltage: 50 V
Collector-Emitter Voltage: 50 V
Collector Current — Continuous: 100 mA
Input Forward Voltage: 40 V
Input Reverse Voltage: 6 V
Total Device Dissipation (Ta=25°C, SC-59): 230 mW
Thermal Resistance, Junction to Ambient: 540 °C/W
Storage Temperature Range: -55 to +150 °C
Package: SC-59 (TO-236)
Maximum Power Dissipation (SC-59): 230 mW at 25°C
Thermal Resistance, Junction to Lead: 264 °C/W
Buy the ON Semiconductor Series Bias Resistor Transistor: MUN2214T1G
Enhance your designs with the reliable ON Semiconductor Digital Bias Transistor. The MUN2214T1G integrates a bias network into a single device, reducing component count and saving board space. Suitable for industrial and power management applications, it features a collector-emitter voltage of 50 V and a continuous collector current of 100 mA. With a package size of SC-59 and thermal resistance of 540 °C/W, this transistor ensures efficient operation and simplified circuit design. Buy online now for high-quality, cost-effective electronic solutions.
Order your ON Semiconductor Series Bias Resistor Transistor MUN2214T1G today and give your projects the dependable quality they deserve.
Frequently Asked Questions
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