The N-channel SiC power MOSFET features an ultra-low gate charge of 200 nC and a low output capacitance of 295 pF, making it ideal for high-efficiency switching applications. It offers a drain-to-source voltage of 900 V and a continuous drain current of 112 A, suitable for UPS, DC/DC converters, and inverters. Designed with robust avalanche testing and RoHS compliance, this MOSFET ensures reliable performance under demanding conditions. Its low ON-resistance and high voltage ratings make it a versatile component for power management and industrial automation systems, providing excellent thermal and electrical stability.
ONSEMI NTBG020N090SC1 High Voltage Power MOSFET Specifications:
Drain-to-Source Voltage: 900 V
Maximum Continuous Drain Current: 112 A
Gate-to-Source Voltage: +19/-10 V
On-Resistance: 20 mΩ at 15 V
Gate Charge: 200 nC
Output Capacitance: 295 pF
Thermal Resistance Junction-to-Case: 0.31°C/W
Thermal Resistance Junction-to-Ambient: 41°C/W
Power Dissipation: 477 W (case temperature) and 37 W (ambient)
Repetitive Avalanche Energy: 264 mJ
Operating Junction Temperature Range: -55°C to +175°C
Width: 15.10 mm, Length: 9.00 mm, Case: D2PAK-7L
Buy the Buy Semiconductor High Voltage Power MOSFET Part Number NTBG020N090SC1 Online
Order the Semiconductor high-voltage power MOSFET NTBG020N090SC1 online today to enhance your power management systems. With its 900 V voltage rating, 112 A current capacity, and low gate charge of 200 nC, it ensures efficient switching performance. Perfect for UPS, inverter, and DC/DC converter applications, this MOSFET provides high thermal efficiency, low on-resistance, and robust avalanche testing. Buying online guarantees quick delivery and assurance of authentic, high-quality components for your industrial and automation projects.
Buy Semiconductor high-voltage power MOSFET NTBG020N090SC1 now and experience unmatched reliability with ultra-low gate charge and high current capacity.
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