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ONSEMI NTBG020N090SC1 High Voltage Power MOSFET

The N-channel SiC power MOSFET features an ultra-low gate charge of 200 nC and a low output capacitance of 295 pF, making it ideal for high-efficiency switching applications. It offers a drain-to-source voltage of 900 V and a continuous drain current of 112 A, suitable for UPS, DC/DC converters, and inverters. Designed with robust avalanche testing and RoHS compliance, this MOSFET ensures reliable performance under demanding conditions. Its low ON-resistance and high voltage ratings make it a versatile component for power management and industrial automation systems, providing excellent thermal and electrical stability.

Authorized Distributors
Source:Newark
Part No:NTBG020N090SC1
Stock:64
Inv Date:06-11-2026
Price: Unit price: $21.94
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Source:DigiKey
Part No:NTBG020N090SC1
Stock:714
Inv Date:06-11-2026
Price: Unit price: $30.48
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Part No:NTBG020N090SC1
Stock:1859
Inv Date:06-12-2026
Price: Unit price: $28.38
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Part No:NTBG020N090SC1
Stock:0
Inv Date:06-11-2026
Price: Unit price: $52.67
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Part No:NTBG020N090SC1
Stock:0
Inv Date:06-11-2026
Price: Unit price: $52.67
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Part No:NTBG020N090SC1
Stock:0
Inv Date:06-11-2026
Price: Unit price: $18.02
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Source:Arrow EU
Part No:NTBG020N090SC1
Stock:4800
Inv Date:06-12-2026
Price: N/A
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Part No:NTBG020N090SC1
Stock:30
Inv Date:06-12-2026
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ONSEMI NTBG020N090SC1 High Voltage Power MOSFET Specifications:

  • Drain-to-Source Voltage: 900 V
  • Maximum Continuous Drain Current: 112 A
  • Gate-to-Source Voltage: +19/-10 V
  • On-Resistance: 20 mΩ at 15 V
  • Gate Charge: 200 nC
  • Output Capacitance: 295 pF
  • Thermal Resistance Junction-to-Case: 0.31°C/W
  • Thermal Resistance Junction-to-Ambient: 41°C/W
  • Power Dissipation: 477 W (case temperature) and 37 W (ambient)
  • Repetitive Avalanche Energy: 264 mJ
  • Operating Junction Temperature Range: -55°C to +175°C
  • Width: 15.10 mm, Length: 9.00 mm, Case: D2PAK-7L

Buy the Buy Semiconductor High Voltage Power MOSFET Part Number NTBG020N090SC1 Online

Order the Semiconductor high-voltage power MOSFET NTBG020N090SC1 online today to enhance your power management systems. With its 900 V voltage rating, 112 A current capacity, and low gate charge of 200 nC, it ensures efficient switching performance. Perfect for UPS, inverter, and DC/DC converter applications, this MOSFET provides high thermal efficiency, low on-resistance, and robust avalanche testing. Buying online guarantees quick delivery and assurance of authentic, high-quality components for your industrial and automation projects.

Buy Semiconductor high-voltage power MOSFET NTBG020N090SC1 now and experience unmatched reliability with ultra-low gate charge and high current capacity.

Frequently Asked Questions

Where can I buy ONSEMI NTBG020N090SC1?

You can click on the BUY or RFQ button to purchase NTBG020N090SC1 from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part NTBG020N090SC1?

You can download the NTBG020N090SC1 datasheet or visit the ONSEMI website for support.

Who is the manufacturer of NTBG020N090SC1?

ONSEMI

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