myMectronic
myMectronic

A Premier B2B Part Search

ONSEMI NTH4L040N120SC1 Silicon Carbide Power MOSFET

The NTH4L040N120SC1 is a high-voltage N-channel Silicon Carbide MOSFET designed for industrial power switching applications. It features ultra-low gate charge, high-speed switching capabilities, and is 100% avalanche tested for reliability. Suitable for UPS systems, DC/DC converters, and boost inverters, it offers a drain-to-source voltage of 1200 V, a continuous drain current of 58 A, and low on-resistance. Its robust thermal and electrical characteristics ensure efficient performance in demanding environments.

Authorized Distributors
Source:Newark
Part No:NTH4L040N120SC1
Stock:450
Inv Date:06-10-2026
Price: Unit price: $11.44
Buy/RFQ:
Source:DigiKey
Part No:NTH4L040N120SC1
Stock:432
Inv Date:06-11-2026
Price: Unit price: $23.7
Buy/RFQ:
Part No:NTH4L040N120SC1
Stock:1446
Inv Date:06-11-2026
Price: Unit price: $20.3
Buy/RFQ:
Part No:NTH4L040N120SC1
Stock:0
Inv Date:06-11-2026
Price: Unit price: $34.84
Buy/RFQ:
Part No:NTH4L040N120SC1
Stock:0
Inv Date:06-11-2026
Price: Unit price: $34.84
Buy/RFQ:
Part No:NTH4L040N120SC1
Stock:0
Inv Date:06-10-2026
Price: Unit price: $13.11
Buy/RFQ:
Source:Arrow EU
Part No:NTH4L040N120SC1
Stock:882
Inv Date:06-11-2026
Price: N/A
Buy/RFQ:
Part No:NTH4L040N120SC1
Stock:30
Inv Date:06-11-2026
Price: N/A
Buy/RFQ:

ONSEMI NTH4L040N120SC1 Silicon Carbide Power MOSFET Specifications:

  • Drain-to-Source Voltage: 1200 V
  • Continuous Drain Current: 58 A at 25°C
  • Power Dissipation: 319 W at 25°C
  • Maximum Junction Temperature: 175°C
  • Gate-to-Source Voltage: -15/425 V
  • Gate Threshold Voltage: 1.8/3.4 V
  • On-Resistance: 40-70 mo depending on temperature
  • Capacitances: Coss = 137 pF, Ciss = 172 pF, Cass = 17 pF
  • Total Gate Charge: 106 nc
  • Pulsed Drain Current: 232 A
  • Avalanche Energy: 578 mJ
  • Thermal Resistance (Junction-to-Ambient): 40 °C/W
  • Package: TO-247-4L

Buy the ON Semiconductor NTH4L040N120SC1 – Reliable SiC Power MOSFET for Industrial Applications

Purchase the Silicon Carbide Power MOSFET now and benefit from its high-voltage capacity, ultra-low gate charge, and fast switching for efficient power conversion. Designed for demanding industrial environments, this device offers high current capacity, low on-resistance, and excellent thermal performance, ensuring reliable operation in UPS, inverter, and DC/DC systems. Order online today to enhance your power electronics with this robust and efficient MOSFET that meets stringent industry standards and guarantees dependable long-term performance.

Buy ON Semiconductor NTH4L040N120SC1 now and experience unmatched reliability and high-performance in your industrial power systems.

Frequently Asked Questions

Where can I buy ONSEMI NTH4L040N120SC1?

You can click on the BUY or RFQ button to purchase NTH4L040N120SC1 from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part NTH4L040N120SC1?

You can download the NTH4L040N120SC1 datasheet or visit the ONSEMI website for support.

Who is the manufacturer of NTH4L040N120SC1?

ONSEMI

ONSEMI Part List

Browse and search other ONSEMI parts, locate datasheets and stock

Sponsored by