The N-channel Power MOSFET is a high-voltage SuperFET III device designed for industrial power applications. Featuring charge balance technology, it offers low on-resistance, fast switching, and reliability for power supplies, telecom, UPS, and solar systems. Encased in an ultra-slim Power88 package (8x8 mm) with excellent thermal and electrical performance, it handles drain voltages up to 650 V, continuous drain current of 36 A, and pulsed current up to 90 A. Its optimized body diode and Avalanche-rated performance ensure durability in demanding environments.
ONSEMI NTMT090N65S3HF High-Voltage Power MOSFET Specifications:
Drain to Source Voltage: 650 V
Gate to Source Voltage Dc/Ac: +30 V
Drain Current Continuous: 36 A at 25°C
Drain Current Pulsed: 90 A
Avalanche Energy: 440 mJ
Repetitive Avalanche Energy: 2.72 mJ
Power Dissipation: 272 W at 25°C
Thermal Resistance Junction to Case: 0.46 °C/W
Thermal Resistance Junction to Ambient: 45 °C/W
Operating Temperature Range: -55°C to +150°C
Case Dimensions: 8x8 mm Power88 package
Peak Diode Recovery dv/dt: 50 V/μs
Gate Charge: 66 nC at 10 V
Switching Times: Rise time 19 ns, Fall time 31 ns
Body Diode Forward Voltage: 1.3 V at 18 A
Buy the ON Semiconductor NTMT090N65S3HF – Reliable Power MOSFET for Industrial Applications
Experience reliable high-voltage switching with the ON Semiconductor NTMT090N65S3HF. This N-channel Power MOSFET offers 650 V and 36 A current ratings, optimized for power supplies, telecom, and industrial equipment. Its compact Power88 package ensures minimal parasitic inductance and superior thermal performance. Designed with charge balance technology, it features low on-resistance, fast switching times, and an Avalanche-rated body diode, making it ideal for demanding environments. Purchase online today and enhance your power system efficiency with confidence.
Get ON Semiconductor NTMT090N65S3HF today—built for precision, high voltage switching, and long-lasting durability in industrial power systems.
Frequently Asked Questions
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