ONSEMI NVH4L040N120SC1 High-Voltage SiC Power MOSFET
The SiC power N-channel MOSFET in TO247-4L package provides reliable high-voltage switching for industrial applications. Featuring a drain-to-source voltage of 1200 V, low gate charge, and high-speed switching capabilities, it is ideal for automotive onboard chargers and EV/DC/DC converters. The device is 100% avalanche tested, RoHS compliant, and suitable for demanding environments, offering low Rps(on) of 40 mΩ, high pulsed drain current of 232 A, and excellent thermal performance with a maximum junction temperature of 175°C for robust operation.
Package: TO247-4L, dimensions: length 5.00 mm (nom), width 2.40 mm (nom), height 2.00 mm (nom)
Maximum Lead Temperature for Soldering: 300°C
Buy the ON Semiconductor NVH4L040N120SC1 – Reliable High-Voltage SiC Power MOSFET for Industrial Applications
Purchase the ON Semiconductor NVH4L040N120SC1 online today to ensure your projects benefit from this high-voltage, fast-switching SiC power MOSFET. With a voltage rating of 1200 V and high pulsed current capabilities, it is perfect for automotive onboard chargers, EV/DC/DC converters, and high-efficiency industrial switching. This device offers low gate charge and high-speed operation, providing reliable performance, excellent thermal handling, and RoHS compliance. Get your supply now and optimize your power electronics with confidence.
Order your ON Semiconductor NVH4L040N120SC1 today and enhance your power switching systems with this high-performance, automotive-grade SiC MOSFET.
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