myMectronic
myMectronic

A Premier B2B Part Search

ONSEMI NVH4L040N120SC1 High-Voltage SiC Power MOSFET

The SiC power N-channel MOSFET in TO247-4L package provides reliable high-voltage switching for industrial applications. Featuring a drain-to-source voltage of 1200 V, low gate charge, and high-speed switching capabilities, it is ideal for automotive onboard chargers and EV/DC/DC converters. The device is 100% avalanche tested, RoHS compliant, and suitable for demanding environments, offering low Rps(on) of 40 mΩ, high pulsed drain current of 232 A, and excellent thermal performance with a maximum junction temperature of 175°C for robust operation.

Authorized Distributors
Source:Newark
Part No:NVH4L040N120SC1
Stock:860
Inv Date:06-11-2026
Price: Unit price: $27.92
Buy/RFQ:
Source:DigiKey
Part No:NVH4L040N120SC1
Stock:221
Inv Date:06-11-2026
Price: Unit price: $28.39
Buy/RFQ:
Part No:NVH4L040N120SC1
Stock:224
Inv Date:06-11-2026
Price: Unit price: $28.06
Buy/RFQ:
Part No:NVH4L040N120SC1
Stock:0
Inv Date:06-11-2026
Price: Unit price: $51.029
Buy/RFQ:
Part No:NVH4L040N120SC1
Stock:0
Inv Date:06-11-2026
Price: Unit price: $51.029
Buy/RFQ:
Part No:NVH4L040N120SC1
Stock:450
Inv Date:06-10-2026
Price: Unit price: $16.48
Buy/RFQ:

ONSEMI NVH4L040N120SC1 High-Voltage SiC Power MOSFET Specifications:

  • Drain-to-Source Voltage: 1200 V
  • Gate-to-Source Voltage Range: -15/+25 V
  • Continuous Drain Current: 58 A at 25°C
  • Power Dissipation: 319 W (max), 160 W at 100°C
  • Pulsed Drain Current: 232 A
  • Maximum Junction Temperature: 175°C
  • Gate Charge: 106 nC
  • On Resistance: 40 mΩ at Vgs = 20 V, 66 mΩ at Vgs = 20 V, 175°C
  • Capacitance: Coss = 137 pF, Ciss = 172 pF
  • Switching Losses: T_on delay 30 ns, T_off delay 32 ns
  • Avalanche Energy: 578 mJ
  • Package: TO247-4L, dimensions: length 5.00 mm (nom), width 2.40 mm (nom), height 2.00 mm (nom)
  • Maximum Lead Temperature for Soldering: 300°C

Buy the ON Semiconductor NVH4L040N120SC1 – Reliable High-Voltage SiC Power MOSFET for Industrial Applications

Purchase the ON Semiconductor NVH4L040N120SC1 online today to ensure your projects benefit from this high-voltage, fast-switching SiC power MOSFET. With a voltage rating of 1200 V and high pulsed current capabilities, it is perfect for automotive onboard chargers, EV/DC/DC converters, and high-efficiency industrial switching. This device offers low gate charge and high-speed operation, providing reliable performance, excellent thermal handling, and RoHS compliance. Get your supply now and optimize your power electronics with confidence.

Order your ON Semiconductor NVH4L040N120SC1 today and enhance your power switching systems with this high-performance, automotive-grade SiC MOSFET.

Frequently Asked Questions

Where can I buy ONSEMI NVH4L040N120SC1?

You can click on the BUY or RFQ button to purchase NVH4L040N120SC1 from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part NVH4L040N120SC1?

You can download the NVH4L040N120SC1 datasheet or visit the ONSEMI website for support.

Who is the manufacturer of NVH4L040N120SC1?

ONSEMI

ONSEMI Part List

Browse and search other ONSEMI parts, locate datasheets and stock

Sponsored by