Silicon Carbide Schottky Diode offers superior switching, high efficiency, and reliability for power applications. It features no reverse recovery current, excellent thermal performance, and is Avalanche Rated at 49 mJ. Suitable for general purpose, SMPS, solar inverters, and UPS systems, it operates up to 175°C with a maximum junction temperature. Its high surge current capacity and positive temperature coefficient make it ideal for power switching circuits. Pb-Free, halogen-free, and RoHS compliant, ensuring environmentally friendly operation.
ONSEMI FFSD1065B Power Schottky Diode Specifications:
Maximum Junction Temperature: 175°C
Peak Repetitive Reverse Voltage: 650 V
Avalanche Rated Energy: 49 mJ
Forward Current: 10 A at Tg < 150°C
Surge Current: 650 A (25°C, 10 us)
Power Dissipation: 98 W at 25°C
Operating and Storage Temperature: -55°C to +175°C
Thermal Resistance, Junction to Case: 1.53°C/W
Forward Voltage: 1.38V at 10A, 25°C
Reverse Current: 0.5A at 650V, 25°C
Capacitance: 424pF at 1V, 100kHz
Case Type: DPAK3 (TO-252, 3 Lead)
Pb-Free, Halogen-Free, RoHS Compliant
Buy the ON Semiconductor FFSD1065B – Reliable Power Schottky Diode for Industrial Applications
Purchase the ON Semiconductor FFSD1065B Power Schottky Diode online today—designed for high efficiency, reliability, and superior thermal performance in power electronics. This diode operates up to 175°C with a maximum junction voltage of 650V and a continuous forward current of 10A. It is avalanche rated at 49 mJ, making it ideal for SMPS, solar inverters, and UPS systems. Its Pb-Free, halogen-free, and RoHS compliance ensures environmentally friendly operation, offering optimal performance in demanding industrial applications. Get yours now for dependable power management.
Get ON Semiconductor FFSD1065B today—built for precision and long-lasting durability in power switching circuits.
Frequently Asked Questions
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You can download the FFSD1065B datasheet or visit the ONSEMI website for support.
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ONSEMI
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