The NZT605 is a high-gain NPN Darlington transistor designed for applications requiring collector currents up to 1.0A and high breakdown voltage. Sourced from process 06, it features a SOT-223 package, collector-emitter voltage of 410V, collector-base voltage of 140V, and emitter-base voltage of 40V. Its maximum collector current is 1.5A, with operating temperature from -55°C to +150°C. Electrical characteristics include a DC current gain up to 5000, saturation voltages around 1V, transition frequency of 150MHz, and total device dissipation of 1000mW. Typical uses include high voltage switching and linear amplification circuits requiring high gain and robust performance.
Purchase the ON Semiconductor NZT605 online today—engineered for high voltage applications requiring excellent gain and robust thermal performance. This high-gain NPN Darlington transistor offers a collector-emitter voltage of 410V and a maximum collector current of 1.5A, ideal for high-voltage switching, linear amplification, and power management circuits. Its durable SOT-223 package and wide operating temperature range ensure reliability across various demanding environments. Order now to benefit from fast delivery, competitive pricing, and proven performance for your electronic designs.
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You can download the NZT605 datasheet or visit the ONSEMI website for support.
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