The SZMMBZ18VALT1G is a dual monolithic silicon Zener diode designed for transient overvoltage and ESD protection in space-constrained electronics. Suitable for computers, communication systems, medical devices, and industrial applications, it features a SOT-23 package, working peak reverse voltage from 3 V to 26 V, and Zener breakdown voltage from 5.6 V to 47 V. Its low leakage current, high power ratings of 24 or 40 W, and compliance with RoHS, UL 94 V-0, AEC-Q101 standards make it ideal for automotive and sensitive electronic protection. The device withstands soldering temperatures up to 260°C and is supplied in tape and reel for automated assembly.
Maximum soldering temperature: 260°C for 10 seconds
Peak Power Dissipation: 24 W (models up to 9V1), 40 W (models from 12V to 47V)
Total Power Dissipation: 225 mW on FR-5 board, 300 mW on alumina substrate
Temperature Range: -55°C to +150°C
Working Peak Reverse Voltage: 3 V to 26 V
Breakdown Voltage Range: 5.6 V to 47 V
Zener and Storage Temperature: -55°C to +150°C
Compliance: RoHS, UL 94 V-0, AEC-Q101 Qualified
ESD Ratings: Class 3B (> 16 kV), Class C (> 400 V), IEC61000-4-2 Level 4 (+30 kV contact discharge)
Buy the Buy ON Semiconductor SZMMBZ18VALT1G Part Number SZMMBZ18VALT1G Online
Purchase the ON Semiconductor SZMMBZ18VALT1G today online and enhance your electronic device protection with reliable transient overvoltage and ESD suppression. Featuring high peak power ratings of 24 or 40 W, low leakage current, and RoHS compliance, this compact dual diode in SOT-23 package is ideal for applications with limited board space like computers, communication systems, and medical equipment. Its robust construction and high-temperature tolerance ensure durability and safety in demanding environments while simplifying automated assembly through tape and reel packaging.
Order your ON Semiconductor SZMMBZ18VALT1G series diode today and benefit from high-quality transient and ESD protection for your critical electronics.
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