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ONSEMI MMUN2233LT1G NPN Transistor with Bias Network

The MMUN2233LT1G is an NPN transistor featuring a monolithic bias resistor network that combines a series base resistor and a base-emitter resistor into a single device. This design simplifies circuit layout, reduces system cost, saves valuable board space, and lowers component count. It is AEC-Q101 qualified and PPAP capable, suitable for automotive and industrial applications. The device supports maximum collector-base voltage of 50 V, collector current of 100 mA, and has thermal properties optimized for reliable performance. It is Pb-free, halogen-free, and RoHS compliant, ensuring environmentally friendly manufacturing.

Authorized Distributors
Source:Newark
Part No:MMUN2233LT1G
Stock:37
Inv Date:06-10-2026
Price: Unit price: $0.135
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Source:DigiKey
Part No:MMUN2233LT1G
Stock:58481
Inv Date:06-10-2026
Price: Unit price: $0.14
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Part No:MMUN2233LT1G
Stock:13439
Inv Date:06-11-2026
Price: Unit price: $0.29
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Part No:MMUN2233LT1G
Stock:0
Inv Date:06-10-2026
Price: Unit price: $0.06
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Part No:MMUN2233LT1G
Stock:156000
Inv Date:06-10-2026
Price: Unit price: $0.0209
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Part No:MMUN2233LT1G
Stock:156000
Inv Date:06-10-2026
Price: Unit price: $0.0209
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Part No:MMUN2233LT1G
Stock:1338000
Inv Date:06-10-2026
Price: Unit price: $0.0147
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Source:Arrow EU
Part No:MMUN2233LT1G
Stock:159000
Inv Date:06-11-2026
Price: N/A
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Part No:MMUN2233LT1G
Stock:21000
Inv Date:06-11-2026
Price: N/A
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ONSEMI MMUN2233LT1G NPN Transistor with Bias Network Specifications:

  • Collector-Base Voltage: 50 V
  • Collector-Emitter Voltage: 50 V
  • Collector Current: 100 mA
  • Input Forward Voltage: 30 V
  • Input Reverse Voltage: 5 V
  • Thermal Resistance Junction to Ambient: 370 °C/W
  • Total Device Dissipation at 25°C: 338 mW
  • Maximum Power Dissipation: 338 mW
  • Junction and Storage Temperature Range: -55 to +150 °C
  • Thermal Resistance Junction to Lead: 287 °C/W
  • Maximum Power Dissipation: 338 mW
  • Package Types: SOT-23, SC-75, SC-70/SOT-323, SOT-1123, SOT-723

Buy the Buy ON Semiconductor MMUN2233LT1G Part Number MMUN2233LT1G Online

Acquire the ON Semiconductor MMUN2233LT1G NPN transistor with integrated bias resistor network online today. Designed for automotive and industrial applications, this device simplifies circuit design by eliminating external resistors, reducing component count, saving space, and lowering costs. It is AEC-Q101 qualified and PPAP capable, ensuring quality and reliability. Made with environmentally friendly RoHS-compliant materials, it offers maximum collector-base voltage of 50V, collector current of 100mA, and features excellent thermal performance, making it ideal for demanding electronic systems.

Buy ON Semiconductor MMUN2233LT1G now and experience unmatched reliability and performance in automotive and industrial circuits.

Frequently Asked Questions

Where can I buy ONSEMI MMUN2233LT1G?

You can click on the BUY or RFQ button to purchase MMUN2233LT1G from an authorized ONSEMI distributor.

How do I troubleshoot issues or seek technical support for part MMUN2233LT1G?

You can download the MMUN2233LT1G datasheet or visit the ONSEMI website for support.

Who is the manufacturer of MMUN2233LT1G?

ONSEMI

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