The 2SAR340P is a medium-power NPN transistor designed for low frequency amplification, offering a VcEo of -400V and Ic of -100mA. It features a low VcE (sat) of approximately 400mV and a collector-base voltage of -400V, making it suitable for high-voltage applications. Packaged in a compact MPT3 form factor, it is ideal for use in amplifier circuits and other electronic systems requiring reliable switching and amplification with a maximum power dissipation of 2.0W. Its high DC gain and robust structure ensure stable performance under typical operating conditions.
ROHM 2SAR340PT100P NPN Power Transistor Specifications:
Collector-base voltage: -400V
Collector-emitter voltage: -400V
Emitter-base voltage: 7V
Collector current: -100mA
Base current: -30mA
Power dissipation: 2.0W
Junction temperature: 150°C
Storage temperature: -55°C to +150°C
DC current gain (hFE): 82 to 270
Collector cutoff current: 10pA
Emitter cutoff current: 10pA
Collector-emitter saturation voltage: -150mV at 20mA
Output capacitance: 15pF
Temperature rating: Max operating junction temperature 150°C
Buy the ROHM Series MPT3 NPN Transistor: 2SAR340P
Enhance your electronic designs with the reliable and efficient NPN Power Transistor. The 2SAR340P is ideal for low frequency amplification and high-voltage switching applications, featuring a maximum collector-base voltage of -400V and a collector current of -100mA. Packaged in a compact MPT3 form factor, this transistor offers high DC gain, low saturation voltage, and excellent thermal stability, ensuring durable operation in demanding environments. Perfect for amplifiers, switching circuits, and industrial systems requiring robust performance and dependable quality.
Order your ROHM Series MPT3 2SAR340P transistor today and give your electronic projects the dependable high-voltage amplification performance they deserve.
Frequently Asked Questions
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