The 2SB1386T100R is a -5A PNP low-frequency epitaxial planar silicon transistor characterized by low collector to emitter saturation voltage. It offers excellent DC current gain characteristics and is commonly used in industrial and power management applications. Designed for reliable performance, this transistor features collector-emitter voltage of -20V, collector current of -5A, and junction temperature up to 150°C. Its compact package and stable electrical properties make it suitable for various industrial electronics, automation, and power regulation circuits, ensuring dependable operation in demanding environments.
Buy the ROHM 2SB1386T100R transistor online today and enhance your industrial electronics with a highly reliable component designed for power management and automation. Featuring low collector-emitter saturation voltage and high DC current gain, this transistor ensures excellent performance in demanding environments. Its robust specifications include -20V collector-emitter voltage, 5A collector current, and a junction temperature of 150°C. Place your order now to benefit from fast delivery, secure shopping, and superior performance in your power regulation and automation projects.
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You can download the 2SB1386T100R datasheet or visit the ROHM website for support.
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