The R8009KNX is a high-voltage, power MOSFET with a voltage rating of 800V and a continuous drain current of 9A, designed for efficient switching applications. It features low on-resistance, fast switching capabilities, and a body diode for improved performance. Encased in a TO-220FM package, it is RoHS compliant, Pb-free, and suitable for high-voltage power control, inverter systems, and power supply circuits. Its thermal and static characteristics ensure reliable operation over a wide temperature range, making it ideal for industrial and electronic equipment requiring high efficiency.
ROHM R8009KNXC7G High Voltage Power MOSFET Specifications:
Drain - Source voltage Voss 800 V
Continuous drain current Ip 9 A
Pulsed drain current Ipp 27 A
Gate - Source voltage Vess ±30 V
Static on-resistance Ros 0.05 - 0.6 Ω
Avalanche current 1.8 A
Power dissipation 59 W
Junction temperature range -55 to +150 °C
Thermal resistance junction-case 2.1 °C/W
Thermal resistance junction-ambient 75 °C/W
Dimensions: Length varies with model, typical 15.67-16.27 mm in length, body width approximately 3 mm
Soldering temperature up to 265°C for 10 seconds
Buy the Buy ROHM R8009KNX Part Number R8009KNXC7G Online
Purchase the ROHM R8009KNX high-voltage MOSFET online today for your power management needs. With a voltage rating of 800V, 9A current capacity, low on-resistance, and fast switching features, this device is ideal for inverter circuits, power supplies, and industrial applications. Its RoHS compliance and Pb-free construction ensure environmentally friendly integration. Easy to incorporate into your system, this MOSFET offers excellent thermal stability and reliable operation across a wide temperature range, providing you with dependable power control performance for demanding electronics projects.
Order your ROHM Power MOSFET R8009KNXC7G today and ensure reliable high-voltage switching performance for your industrial electronics.
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