The 2SK3018T106 is an N-channel silicon MOSFET with a drain-source voltage rating of 30V and a continuous drain current of ±100mA. It features low on-resistance, fast switching speed, and operates with a low gate voltage of 2.5V, making it ideal for portable equipment. The device is suitable for interfacing and switching applications, including power management, portable devices, and industrial use. Its simple drive circuits and ease of parallel operation enhance versatility. Please note that market demand has extended lead times, and delivery dates may fluctuate. The product is exempt from discounts.
Order the ROHM 2SK3018 N-channel MOSFET today and enhance your design with a device that offers low-voltage operation, fast switching, and low on-resistance. Ideal for power management, portable equipment, and industrial applications, this MOSFET features easy parallel operation and simple drive circuitry. Its robust specifications include a 30V drain-source voltage, ±100mA continuous drain current, and thermal stability up to 150°C. Ensure your projects benefit from reliable performance and quick delivery by purchasing online now.
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You can download the 2SK3018T106 datasheet or visit the ROHM website for support.
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