The RQ5A030AP is a power MOSFET designed for efficient switching applications, offering low on-resistance, high power capability in small packages like TSMT3, and compliance with RoHS standards. It features a drain-source voltage of -12V, continuous drain current of 43.0A, pulsed current of 9.0A, and a power dissipation of 0.7W, suitable for high-current switching circuits with excellent thermal characteristics and robust electrical performance across temperature ranges.
Body Diode Forward Voltage: Vge= OV, Ig= -3.0A, Max - 1.2V
On-Resistance: 75 to 180 mΩ depending on conditions
Package: TSMT3 small mold, RoHS compliant, halogen free
Operating Temperature: -55°C to +150°C
Peak Power Dissipation per pulse: 1.0W
Switching Characteristics include delay times, rise/fall times, and gate charge consistent with high-speed switching requirements.
Buy the Buy ROHM RQ5A030AP Power MOSFET Part Number RQ5A030APTL Online
Enhance your electronic circuits with the high-performance ROHM RQ5A030AP power MOSFET. Featuring low on-resistance and a high drain current of 43A in a compact TSMT3 package, this device ensures efficient switching with excellent thermal stability. Its RoHS compliance and halogen-free design make it suitable for environmentally conscious applications. Perfect for high-power switching, it offers a maximum drain-source voltage of -12V and a pulsed drain current of 9A, providing reliable operation across a wide temperature range and supporting advanced electronic designs with superior performance.
Buy ROHM RQ5A030AP power MOSFET now and experience unmatched reliability and performance in high-current switching applications.
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