The BAS21VM is a high-speed switching diode characterized by a SOD-323 package, capable of handling 200 mA forward current and withstanding peak repetitive reverse voltage of 250 V. Designed for high-frequency switching applications, this silicon epitaxial planar diode features a low forward voltage of approximately 0.75 V at 100 mA. Its compact form and high current overload capacity make it suitable for rectification and switching in various electronic circuits. Operating reliably up to 150°C junction temperature, it is ideal for power management and signal processing tasks demanding fast response times.
ROHM BAS21VMTE17 High Speed Switching Diode Specifications:
Repetitive peak reverse voltage: 250 V
Reverse voltage: 200 V
Forward current: 200 mA
Repetitive peak forward current: 625 mA
Non-repetitive surge current: 2 A
Power dissipation: 250 mW
Operating junction temperature: -55°C to +150°C
Forward voltage at 100mA: 0.75 V (typical)
Reverse current at 160°C: 100 nA
Reverse recovery time: 50 ns
Terminal capacitance: 25 pF
Thermal resistance junction to ambient: 300°C/W
Buy the Buy ROHM BAS21VM Part Number BAS21VMTE17 Online
Purchase the ROHM BAS21VMTE17 high-speed diode online today and enhance your circuit's performance with its fast switching speed, high current capacity, and low forward voltage. Perfect for rectification and high-frequency applications, this diode offers reliable operation up to 150°C junction temperature. Its compact SOD-323 package simplifies integration into your electronic designs. With a peak reverse voltage of 250V and a forward current of 200mA, it ensures efficient power management and signal processing in demanding environments. Buy now for fast delivery and trusted quality.
Buy ROHM BAS21VMTE17 now and experience unmatched reliability and high-speed switching performance for your electronic applications.
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