The R6006JNJ is a high-voltage power MOSFET designed for efficient switching applications. Featuring an rds(on) low resistance, fast switching speed, and a maximum drain-source voltage of 600V, it is suitable for power supply and motor control circuits. Its compact TO-263S package ensures easy installation and thermal management. Capable of handling up to 6A continuous drain current and pulsed currents of 18A, this device also boasts robust avalanche energy and low gate leakage. Ideal for demanding industrial and electronic applications requiring reliable and efficient high-voltage switching.
ROHM R6006JNJGTL High-Voltage Power MOSFET Specifications:
Drain - Source Voltage: 600 V
Continuous Drain Current: 6 A
Pulsed Drain Current: 18 A
Gate - Source Voltage: +30 V
Avalanche Current (single pulse): 1.50 A
Avalanche Energy (single pulse): 117 mJ
Power Dissipation: 86 W
Junction Temperature Range: -55 to +150 °C
Thermal Resistance, junction to case: 1.45 °C/W
Thermal Resistance, junction to ambient: 80 °C/W
Package: TO-263S
Gate Resistance: 3.1 Ω
Reverse recovery time: 58 ns
Reverse recovery charge: 150 nc
Buy the ROHM Series R6006JNJ Power MOSFET: R6006JNJ
Purchase the ROHM Series R6006JNJ high-voltage power MOSFET online today for your industrial, power supply, and motor control projects. This device provides reliable performance with a 600V drain-source voltage, 6A continuous current, and fast switching capabilities. Its compact TO-263S package ensures easy installation and efficient heat dissipation. Ideal for demanding applications that require low on-resistance, high avalanche energy, and low gate leakage. Secure your supply of this essential component now and enhance your system’s efficiency and durability.
Order your ROHM Series R6006JNJ power MOSFET today and ensure your high-voltage switching circuits operate with superior efficiency and reliability.
Frequently Asked Questions
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