The R8002KNX is an 800V, 1.6A power MOSFET designed for switching applications. It features low on-resistance, fast switching capabilities, and simple drive circuits, with a lead-free, ROHS-compliant plating. Suitable for high-voltage switching in various electronic devices, it offers a drain-source breakdown voltage of 800V, pulsed drain current up to 48A, and power dissipation of 28W. Its thermal characteristics include a junction-to-ambient resistance of 75°C/W and junction temperature range from -55°C to +150°C, ensuring reliable operation under demanding conditions.
Purchase the ROHM R8002KNX power MOSFET online today to ensure high-voltage switching capabilities in your electronic projects. With an 800V drain-source voltage rating, 1.6A continuous drain current, and fast switching characteristics, this MOSFET is ideal for high-power applications. Its low Rds(on), ROHS compliance, and robust thermal features make it suitable for demanding environments. Enjoy quick delivery and secure checkout for dependable power switching solutions that meet industry standards and improve your device performance.
You can click on the BUY or RFQ button to purchase R8002KNXC7G from an authorized ROHM distributor.
You can download the R8002KNXC7G datasheet or visit the ROHM website for support.
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